Litvinov Wide Bandgap Semiconductor Spintronics

Erscheinungsjahr 2016
ISBN: 978-981-4669-71-9
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 196 Seiten

This book focuses on the spintronic properties of III–V nitride semiconductors. As wide-bandgap III–nitride nanostructures are relatively new materials, particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin–orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new class of materials that could deliver sizable Rashba spin splitting in the surface electron spectrum when implemented into a gated device structure.

Autoren/Hrsg.

Litvinov, Vladimir

Fachgebiete

• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik

Inhaltsverzeichnis

GaN Band Structure. Rashba Hamiltonian. Rashba Spin Splitting in III–Nitride Heterostructures and Quantum Wells. Tunnel Spin Filter in Rashba Quantum Structures. Exchange Interaction in Semiconductors and Metals. Ferromagnetism in III–V Semiconductors. Topological Insulators. Magnetic Exchange Interaction in Topological Insulators.