Wide Bandgap Semiconductor Spintronics

1. Auflage 2016
ISBN: 978-981-4669-70-2
Verlag: Pan Stanford Publishing Pte Ltd

Buch, Englisch, 196 Seiten, Format (B × H): 261 mm x 160 mm, Gewicht: 424 g

This book is focused on the spintronic properties of III–V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin–orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new class of materials that could deliver sizable Rashba spin splitting in the surface electron spectrum. Electrically driven zero-magnetic-field spin splitting of surface electrons is discussed with respect to the specifics of electron-localized spin interaction and voltage-controlled ferromagnetism. The book covers generic topics in spintronics without entering into device specifics, since the overall goal of the enterprise is to provide theoretical background for most common concepts of spin-electron physics and give instructions to be used in solving problems of a general and specific nature. The book is intended for graduate students and may serve as an introductory course in this specific field of solid-state theory and applications.

Zielgruppe

Academic and Postgraduate

Autoren/Hrsg.

Litvinov, Vladimir

Fachgebiete

• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik
• Naturwissenschaften Biowissenschaften Biowissenschaften

Inhaltsverzeichnis

GaN Band Structure. Rashba Hamiltonian. Rashba Spin Splitting in III–Nitride Heterostructures and Quantum Wells. Tunnel Spin Filter in Rashba Quantum Structures. Exchange Interaction in Semiconductors and Metals. Ferromagnetism in III–V Semiconductors. Topological Insulators. Magnetic Exchange Interaction in Topological Insulators.

Über Autor(innen)

Vladimir Litvinov is a principal scientist at Sierra Nevada Corporation, Irvine, California, since 1999. He holds PhD and Doctor of Science degrees in physics from Chernivtsi National University (Ukraine) and the Institute of Physics, Estonian Academy of Sciences (since 1996 Institute of Physics, University of Tartu), respectively. From 1978 to 1996, he was a member and then head of the theoretical lab at the Institute of Materials Science, National Academy of Sciences of Ukraine. From 1996 to 1999, he was a senior research associate at the Center of Quantum Devices, Electrical and Computer Engineering Department, Northwestern University, Evanston, Illinois. His research interests include solid-state and semiconductor physics, optoelectronic devices, spintronics, and millimeter-wave scanning antennas.