Buch, Englisch, 300 Seiten, Format (B × H): 167 mm x 251 mm, Gewicht: 625 g
Buch, Englisch, 300 Seiten, Format (B × H): 167 mm x 251 mm, Gewicht: 625 g
ISBN: 978-0-8247-2569-3
Verlag: EPFL Press
Explaining the physics and characteristics of power semiconductor devices, this book presents an overview of various classes of power semiconductors. It provides insight into how they work and the characteristics of the various components from the viewpoint of the user, going through all modern power semiconductor device types. The physics are explained in reasonable detail, providing the precise amount of information needed to fully understand the component's behavior in the application. Exploring the specific strengths and weaknesses of each device type, the book demonstrates how these devices fit into the system and how they will behave there.
Zielgruppe
Professors, students, researchers, trainees, and practicing engineers in the field of power semiconductors
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
FUNDAMENTALS OF SEMICONDUCTOR PHYSICSFundamentals Charge Transport Carrier Injection Generation and Recombination of Charge Carriers The Continuity Equation The Poisson EquationHigh Field Effects THE P-N JUNCTION The Built-in Voltage of a p-n Junction The Depletion Region (Space-Charge Region) The Current/Voltage Characteristics of the p-n junction The Emitter Efficiency The Real p-n Junction THE PIN-DIODE Conducting state of the pin-diodeThe Dynamic Behavior of the pin-DiodeThe Design of modern pin-Diodes THE BIPOLAR TRANSISTOR The Structure of the Bipolar Transistor The Current Amplification of the BJT Current (Injection-) breakdown of the Bipolar Transistor Voltage drop in the On-state Base push-out ("Kirk"-Effect) Second Breakdown THE THYRISTOR Function of the thyristor The trigger condition Static current-voltage characteristics Transistor operation (stable forward blocking and metastable) Latched State of the thyristor The Thyristor in the Reverse Blocking Mode Turn-on behavior Turn-off Behavior THE GTO AND GCT 163 The GTO The GCT (Gate Commutated Thyristor) THE POWER MOSFET How the MOSFET functions The Structure of the Power MOSFET The Switching Behavior of the power MOSFET Short-circuit Behavior The Anti-parallel Diode THE IGBT 233 Construction and Functional Description of the IGBT The Current/Voltage Characteristics of the IGBT The Switching Behavior of the IGBT Ruggedness of the IGBT Methods to Improve the IGBT Technology Curve
