III-Nitrides Light Emitting Diodes: Technology and Applications

1. Auflage 2020
ISBN: 978-981-15-7951-6
Verlag: Springer Nature Singapore

Buch, Englisch, Band 306, 285 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 470 g

Reihe: Springer Series in Materials Science

The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, such as approaches to improve quantum efficiency and reliability as well as novel structured LEDs. It explores the concept of material growth, chip structure, packaging, reliability and application of LEDs. With spectra coverage from ultraviolet (UV) to entire visible light wavelength, the III-nitride-material-based LEDs have a broad application potential, and are not just limited to illumination. These novel applications, such as health & medical, visible light communications, fishery and horticulture, are also discussed in the book. 

Zielgruppe

Research

Autoren/Hrsg.

Li, Jinmin

Wang, Junxi

Yi, Xiaoyan

Xue, Bin

Liu, Zhiqiang

Wei, Tongbo

Yan, Jianchang

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Nachrichten- und Kommunikationstechnik Optische Nachrichtentechnik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Naturwissenschaften Physik Elektromagnetismus Quantenoptik, Nichtlineare Optik, Laserphysik
• Technische Wissenschaften Technik Allgemein Technische Optik, Lasertechnologie
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik

Inhaltsverzeichnis

Introduction.- Basic concept of light-emitting diodes.- Property and testing analysis of III-nitrides based light-emitting diodes.- Epitaxy growth of III-nitrides based light-emitting diodes.- Green and blue light-emitting diodes based on InGaN/GaN MQWs structure.- UV light-emitting diodes based on AlGaN MQWs structure.- Quantum efficiency promotion of III-nitrides based light-emitting diodes.- Chip process of III-nitrides based light-emitting diodes.- Packaging of III-nitrides based light-emitting diodes.- Reliability analysis of III-nitrides based light-emitting diodes.- Application of light-emitting diodes.- Novel technology of III-nitrides based light-emitting diodes.

Über Autor(innen)

Jinmin Li is a professor at the Institute of Semiconductors (IOS), Chinese Academy of Sciences (CAS). He received his bachelor’s degree from Xi'an Jiaotong University in 1982 and Ph.D. from Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences in 1991. He became a professor at IOS, CAS in 1995 and was the director there from 2003–2012. He has been the director of the Solid State Lighting R&D Center of the Chinese Academy of Sciences since 2006 and director of the State Key Laboratory for Solid State Lighting since 2012. He has published more than 300 articles in peer-reviewed journals and proceedings.