Nonvolatile Memory Design

Magnetic, Resistive, and Phase Change
1. Auflage 2017
ISBN: 978-1-138-07663-1
Verlag: CRC Press

Buch, Englisch, 204 Seiten, Format (B × H): 156 mm x 234 mm, Gewicht: 319 g

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

Zielgruppe

Senior undergraduate students/graduate students in electrical engineering, VLSI, microelectronic, semiconductor and materials; engineers working with nonvolatile memory products, design house/foundry that supplies nonvolatile memory IP, or working at a microprocessor/microcontroller that has on-chip embedded (nonvolatile) memory; researchers working on nonvolatile storage devices.

Autoren/Hrsg.

Li, Hai

Chen, Yiran

Fachgebiete

• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Mathematik | Informatik EDV | Informatik Technische Informatik

Inhaltsverzeichnis

Introduction to Semiconductor Memories. Phase Change Memory (PCM). Toggle-Mode MRAM (TM-MRAM). Spin-Torque Transfer RAM (STT -RAM). Resistive RAM (R-RAM). Memresistor. The Future of Nonvolatile Memory.

Über Autor(innen)

Hai Li