Sonstiges, Englisch, 486 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 486 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-0-87849-165-0
Verlag: Trans Tech Publications
Volume is indexed by Thomson Reuters BCI (WoS).
The electronic properties of solids have become of increasing importance in the age of information technology. The study of solids and materials, while having originated from the disciplines of physics and chemistry, has evolved independently over the past few decades. The classical treatment of solid-state physics, which emphasized classifications, theories and fundamental physical principles, is no longer able to bridge the gap between materials advances and applications. In particular, the more recent developments in device physics and technology have not necessarily been driven by new concepts in physics or new materials, but rather by the ability of engineers to control crystal structures and properties better via advances in crystal growth and patterning techniques. In many cases, new applications simply arise from the adaption of conventional ideas to interdisciplinary areas. One example is that of recent advances which rely heavily upon the availability of the sub-micron technology developed by the semiconductor industry. Another example is the emergence of nanotechnology.
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I-1. Introduction. I-2. Atoms and Binding ForcesI-3. Crystal StructuresI-4. Crystalline SolidsI-5. Polycrystalline and Non-Crystalline SolidsI-6. The Phase DiagramsI-7. Techniques on Crystal Growth and Thin Film DepositionI-8. Crystal ImperfectionI-9. Diffusion in SolidsI-10. Physical Diagnostic ToolsGlossaryReferencesExercises for Chapter III-1. Introduction. II-2. Electrons in a SolidII-3. Energy Distribution of the ElectronsII-4. The Energy Band DiagramII-5. Mathematical Formulation of the Conduction ProcessesII-6. ConductorsII-7. SemiconductorsII-8. Other Conduction MechanismsII-9. Velocity Saturation and Negative-Resistance EffectII-10. InsulatorsGlossary for End-of-Chapter ReviewReferencesExercises for Chapter IIIII-1. Introduction. III-2. Concept of a P-N JunctionIII-3. Schottky Junction and its Electronic PropertiesIII-4. Metal-Semiconductor ContactIII-5. MIS Junction and Field-Effect PropertiesIII-6. Materials ConsiderationsIII-7. Structures and Operation of TransistorsIII-8. Non-Ideal Effects and other Performance ParametersIII-9. New TransistorsGlossary for End-of-Chapter ReviewReferencesExercises for Chapter IIIIV-1. Introduction. IV-2. Review of the Properties of LightIV-3. The Absorption ProcessIV-4. The Emission ProcessIV-5. ImagersIV-6. DisplaysIV-7. Power GenerationIV-8. Optical Signal Transmission MediaGlossaryReferencesExercises for Chapter IVV-1. IntroductionV-2. Magnetic Properties of SolidsV-3. Sources of MagnetizationV-4. Magnetic Anisotropy and Invar AlloysV-5. Amorphous Magnetic MaterialsV-6. Soft Magnets and Hard MagnetsV-7. Magnetic Devices and ApplicationsV-8. Properties of SuperconductorsV-9. Applications of SuperconductorsV-10. Superconducting MaterialsGlossary for End-of-Chapter ReviewReferencesExercises for Chapter VVI-1. Introduction. VI-2. MicromachiningVI-3. Polysilicon Films Used in Micro-StructuresVI-4. Applications of Micro-StructuresVI-5. Heat and Temperature SensorsVI-6. Displacement and Flow SensorsVI-7. Chemical SensorsVI-8. Optical SensorsVI-9. Design of a Pressure TransducerVI-10. Grounding, Shielding and InterferenceVI-11. Packaging MaterialsGlossary for End-of-Chapter ReviewReferences Exercises for Chapter VI
