E-Book, Englisch, 448 Seiten
Technology and Applications
E-Book, Englisch, 448 Seiten
Reihe: Devices, Circuits, and Systems
ISBN: 978-1-4665-6061-1
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)
The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory.
Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation.
The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Static Random Access Memory
SRAM: The Benchmark of VLSI Technology, Qingqing Liang
Complete Guide to Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies, Gilles Gasiot and Philippe Roche
Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation, Lawrence T. Clark
Dynamic Random Access Memory
DRAM Technology, Myoung Jin Lee
Concepts of Capacitorless 1T-DRAM and Unified Memory on SOI, Sorin Cristoloveanu and Maryline Bawedin
A-RAM Family: Novel Capacitorless 1T-DRAM Cells for 22 nm Nodes and Beyond, Francisco Gamiz, Noel Rodriguez, and Sorin Cristoloveanu
Novel Flash Memory
Quantum Dot-Based Flash Memories, Tobias Nowozin, Andreas Marent, Martin Geller, and Dieter Bimberg
Magnetic Memory
Spin-Transfer-Torque MRAM, Kangho Lee
Magnetic Domain Wall "Racetrack" Memory, Michael C. Gaidis and Luc Thomas
Phase-Change Memory
Phase-Change Memory Cell Model and Simulation, Jin He, Yujun Wei, and Mansun Chan
Phase-Change Memory Devices and Electrothermal Modeling, Helena Silva, Azer Faraclas, and Ali Gokirmak
Resistive Random Access Memory
Nonvolatile Memory Device: Resistive Random Access Memory, Peng Zhou, Lin Chen, Hangbing Lv, Haijun Wan, and Qingqing Sun
Nanoscale Resistive Random Access Memory: Materials, Devices, and Circuits, Hong Yu Yu
Index