Kunche / Manikanthababu Fractional Fourier Transform Techniques for Speech Enhancement

1. Auflage 2020
ISBN: 978-3-030-42746-7
Verlag: Springer International Publishing
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 104 Seiten, eBook

Reihe: SpringerBriefs in Speech Technology

This book explains speech enhancement in the Fractional Fourier Transform (FRFT) domain and investigates the use of different FRFT algorithms in both single channel and multi-channel enhancement systems, which has proven to be an ideal time frequency analysis tool in many speech signal processing applications. The authors discuss the complexities involved in the highly non- stationary signal processing and the concepts of FRFT for speech enhancement applications. The book explains the fundamentals of FRFT as well as its implementation in speech enhancement. Theories of different FRFT methods are also discussed. The book lets readers understand the new fractional domains to prepare them to develop new algorithms. A comprehensive literature survey regarding the topic is also made available to the reader.

Zielgruppe

Research

Autoren/Hrsg.

Kunche, Prajna

Manikanthababu, N.

Inhaltsverzeichnis

Chapter 1. Introduction.- Chapter 2. Fractional Fourier Transform (FRFT).- Chapter 3. Dual channel Speech Enhancement based on Fractional Fourier Transform.- Chapter 4. Fractional Cosine Transform based Single Channel Speech Enhancement Technique.- Chapter 5. Fractional Sine Transform based Single Channel Speech Enhancement Technique.- Chapter 6. Summary and Perspectives.

Über Autor(innen)

Dr. Prajna Kunche  is currently working as a Research Associate in Non-Destructive Evaluation Division at Indira Gandhi Centre for Atomic Research, Kalpakkam. She pursued her Ph.D., from Andhra University in 2016. Later she had worked as an ad-hoc faculty at National Institute of Technology, Andhra Pradesh. She has published a Springer Brief book in Speech Technology. Currently, she is the Technical reviewer for two Springer Journals and Editorial board member for three international journals. Dr. N. Manikanthababu  is currently working as a SERB-National Post-Doctoral Fellow at Material Science Group, at Indira Gandhi Centre for Atomic Research, Kalpakkam. He pursued his Ph.D., from University of Hyderabad, Hyderabad, India in 2016. Later he joined IGCAR as a SERB-National Post-Doctoral Fellow. He has published more than 10 research publications in the field of radiation response of Schottky and MOS devices. Currently, he is developing ß–Ga 2 O 3 -based devices for high-power electronics.