Kuech Handbook of Crystal Growth

Thin Films and Epitaxy
2. Auflage 2014
ISBN: 978-0-444-63305-7
Verlag: Elsevier Science & Techn.
Format: EPUB
Kopierschutz: 6 - ePub Watermark

E-Book, Englisch, Band Volume 3A-3B, 1382 Seiten

Reihe: Handbook of Crystal Growth

Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials

Autoren/Hrsg.

Kuech, Tom

Leseproben

List of Contributors
Hiroshi Amano,     Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya, Japan Yamina André Clermont Université, Université Blaise Pascal, Institut Pascal, Clermont-Ferrand, France CNRS, UMR 6602, Aubière, France Hajime Asahi,     The Institute of Scientific and Industrial Research, Osaka University, MIHOGAKA, IBARAKI, Osaka, Japan John E. Ayers,     Electrical and Computer Engineering Department, University of Connecticut, Storrs, CT, USA Michael J. Aziz,     Harvard School of Engineering and Applied Sciences, Cambridge, MA, USA Bhavtosh Bansal,     Dept. of Physical Sciences, Indian Institute of Science Education and Research Kolkata, India Arnab Bhattacharya,     Dept. of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India Robert M. Biefeld,     Sandia National Laboratories, Albuquerque, NM, USA A.A. Bol,     Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands April S. Brown,     Department of Electrical and Computer Engineering, Pratt School of Engineering, Duke University, Durham, NC, USA Robert Cadoret Clermont Université, Université Blaise Pascal, Institut Pascal, Clermont-Ferrand, France CNRS, UMR 6602, Aubière, France Jeffrey G. Cederberg,     Sandia National Laboratories, Albuquerque, NM, USA Xiaogang Chen,     Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL, USA Enrique D. Cobas,     Materials Science and Technology Division, U.S. Naval Research Laboratory, SW Washington, DC, USA James J. Coleman,     Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL, USA Armin Dadgar,     Institute of Experimental Physics, Otto-von-Guericke-Universität Magdeburg, Magdeburg, Germany Paul G. Evans,     Materials Science and Engineering, University of Wisconsin–Madison, Madison, WI, USA Roberto Fornari,     Department of Physics and Earth Sciences, University of Parma, Parma, Italy Hiroshi Fujioka,     Institute of Industrial Science, The University of Tokyo D. Kurt Gaskill,     U.S. Naval Research Laboratory, Washington, DC, USA Evelyne Gil Clermont Université, Université Blaise Pascal, Institut Pascal, Clermont-Ferrand, France CNRS, UMR 6602, Aubière, France Mark S. Goorsky,     UCLA, HSSEAS School of Engineering & Applied Sciences, Department of Materials Science and Engineering, Los Angeles, CA, USA Brett C. Johnson,     School of Physics, University of Melbourne, Victoria, Australia W.M.M. Kessels,     Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands Jeong Dong Kim,     Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL, USA Tsunenobu Kimoto,     Department of Electronic Science and Engineering, Kyoto University, Kyoto, Japan H.C.M. Knoops,     Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands G. Koblmüller Materials Department, University of California, Santa Barbara, CA, USA Walter Schottky Institut and Physik Department, Technische Universität München, Garching, Germany Daniel D. Koleske,     Sandia National Laboratories, Albuquerque, NM, USA Alois Krost,     Institute of Experimental Physics, Otto-von-Guericke-Universität Magdeburg, Magdeburg, Germany Thomas F. Kuech,     Department of Chemical and Biological Engineering, University of Wisconsin–Madison, Madison, WI, USA J.R. Lang Materials Department, University of California, Santa Barbara, CA, USA Electrical Engineering Department, Yale University, New Haven, CT, USA Hongdong Li,     State Key Laboratory of Superhard Materials, Jilin University, Changchun, Jilin, China Xiuling Li,     Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois, Urbana, IL, USA Maria Losurdo,     National Council of Research, Institute of Inorganic Methodologies and of Plasmas, CNR-IMIP, via Orabona 4, 70126 Bari, Italy Fumihiro Matsukura WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan Michael G. Mauk,     College of Engineering, Drexel University, Philadelphia, PA, USA Jeffrey C. McCallum,     School of Physics, University of Melbourne, Victoria, Australia Kathleen M. McCreary,     NRC Postdoctoral Fellow Residing at U.S. Naval Research Laboratory, SW Washington, DC, USA Xin Miao,     Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois, Urbana, IL, USA Osamu Nakatsuka,     Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya, Japan Nathan Newman,     Materials Program, Arizona State University, Tempe, AZ, USA Tatau Nishinaga,     The University of Tokyo, Japan Hideo Ohno WPI-Advanced Institute for Materials Research, Tohoku University, Sendai, Japan Center for Spintronics Integrated Systems, Tohoku University, Sendai, Japan Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan S.E. Potts,     Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands Aaron J. Ptak,     National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO, USA Joan M. Redwing,     Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, PA, USA Zachary R. Robinson,     ASEE Postdoctoral Fellow Residing at U.S. Naval Research Laboratory, SW Washington, DC, USA Scott W. Schmucker,     NRC Postdoctoral Fellow Residing at U.S. Naval Research Laboratory, SW Washington, DC, USA Clemens Simbrunner,     Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Linz, Upper Austria, Austria Helmut Sitter,     Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Linz, Upper Austria, Austria Marek Skowronski,     Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA, USA Josef W. Spalenka,     Materials Science and Engineering, University of Wisconsin–Madison, Madison, WI, USA J.S. Speck,     Materials Department, University of California, Santa Barbara, CA, USA Wolfgang Stolz,     Material Sciences Center and Faculty of Physics, Philipps-Universität Marburg, Marburg, Germany E. Suhir,     ERS Co., Los Altos, CA, USA Roman Talalaev,     STR Group – Soft-Impact Ltd., St. Petersburg, Russia Hidekazu Tanaka,     Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan Agnès Trassoudaine Clermont Université, Université Blaise Pascal, Institut Pascal, Clermont-Ferrand, France CNRS, UMR 6602, Aubière, France Clermont Université, Université d'Auvergne, Institut Pascal, Clermont-Ferrand, France Mahmoud Vahidi,     Materials Program, Arizona State...