Buch, Englisch, 298 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 629 g
Structure, Thermodynamics and Diffusion
Buch, Englisch, 298 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 629 g
Reihe: Engineering Materials and Processes
ISBN: 978-1-84882-058-6
Verlag: Springer
Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Werkstoffkunde, Materialwissenschaft: Forschungsmethoden
- Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
Weitere Infos & Material
Fundamentals of Defect Ionization and Transport.- Experimental and Computational Characterization.- Trends in Charged Defect Behavior.- Intrinsic Defects: Structure.- Intrinsic Defects: Ionization Thermodynamics.- Intrinsic Defects: Diffusion.- Extrinsic Defects.