Kimoto / Cooper Fundamentals of Silicon Carbide Technology

Growth, Characterization, Devices and Applications
1. Auflage 2014
ISBN: 978-1-118-31355-8
Verlag: John Wiley & Sons
Format: EPUB
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 560 Seiten, E-Book

Reihe: Wiley - IEEE

A comprehensive introduction and up-to-date reference toSiC power semiconductor devices covering topics from materialproperties to applications
Based on a number of breakthroughs in SiC material scienceand fabrication technology in the 1980s and 1990s, the first SiCSchottky barrier diodes (SBDs) were released as commercial productsin 2001. The SiC SBD market has grown significantly sincethat time, and SBDs are now used in a variety of power systems,particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011,providing rugged, high-efficiency switches for high-frequency powersystems. In this wide-ranging book, the authors draw on theirconsiderable experience to present both an introduction to SiCmaterials, devices, and applications and an in-depth reference forscientists and engineers working in this fast-movingfield. Fundamentals of Silicon Carbide Technologycovers basic properties of SiC materials, processing technology,theory and analysis of practical devices, and an overview of themost important systems applications. Specifically includedare:
* A complete discussion of SiC material properties, bulk crystalgrowth, epitaxial growth, device fabrication technology, andcharacterization techniques.
* Device physics and operating equations for Schottky diodes, pindiodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, andthyristors.
* A survey of power electronics applications, includingswitch-mode power supplies, motor drives, power converters forelectric vehicles, and converters for renewable energysources.
* Coverage of special applications, including microwave devices,high-temperature electronics, and rugged sensors.
* Fully illustrated throughout, the text is written by recognizedexperts with over 45 years of combined experience in SiC researchand development.
This book is intended for graduate students and researchers incrystal growth, material science, and semiconductor devicetechnology. The book is also useful for design engineers,application engineers, and product managers in areas such as powersupplies, converter and inverter design, electric vehicletechnology, high-temperature electronics, sensors, and smart gridtechnology.

Autoren/Hrsg.

Kimoto, Tsunenobu

Cooper, James A.

Über Autor(innen)

Tsunenobu Kimoto, Department of Electronic Science andEngineering, Kyoto University, Japan.
Professor Kimoto has been involved in SiC research for morethan 20 years and his research activity in this field coversgrowth, optical and electrical characterization, device processing,device design and fabrication. He has published more than 300papers in international journals and has presented more than 50invited talks at international conferences. He was a guesteditor of the 2008 SiC special issues of IEEE Transactions onElectron Devices.
James A Cooper, School of Electrical and ComputerEngineering, Purdue University, Indiana, USA
Professor Cooper was a member of technical staff at BellLaboratories for ten years where he was principal designer ofAT&T's first microprocessor and investigated nonlineartransport in silicon inversion layers. His research at Purduehas centered on semiconductor device physics and characterization,focusing primarily on III-V materials and silicon carbide. Hehas co-authored over 250 technical papers and conferencepresentations.