High-Bandwidth Memory Interface

2014
ISBN: 978-3-319-02380-9
Verlag: Springer International Publishing

Buch, Englisch, 88 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 1591 g

Reihe: SpringerBriefs in Electrical and Computer Engineering

This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.

Zielgruppe

Professional/practitioner

Autoren/Hrsg.

Kim, Chulwoo

Song, Junyoung

Lee, Hyun-Woo

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Schaltungsentwurf
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren

Inhaltsverzeichnis

An introduction to high-speed DRAM.- An I/O Line Configuration and Organization of DRAM.- Clock generation and distribution.- Transceiver Design.- TSV Interface for DRAM.