Kasper / Paul Silicon Quantum Integrated Circuits

Silicon-Germanium Heterostructure Devices: Basics and Realisations
1. Auflage 2005
ISBN: 978-3-540-26382-1
Verlag: Springer Berlin Heidelberg
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 364 Seiten

Reihe: NanoScience and Technology

Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation. The basic physical principles, materials, technological aspects, and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

Autoren/Hrsg.

Kasper, E.

Paul, D. J.

Inhaltsverzeichnis

1;Preface;6
2;Contents;9
3;1. Introduction;13
3.1;1.1 Microelectronics and Optoelectronics;15
3.2;1.2 From Microelectronics to Nanoelectronics;19
3.3;1.3 Self–ordering;22
3.4;1.4 Further Reading;24
4;2. Material Science;25
4.1;2.1 Growth and Preparation Methods ( MBE, CVD, Implantation, Annealing);25
4.2;2.2 Segregation and Diffusion of Dopants and Alloy Materials;41
4.3;2.3 Lattice Mismatch and its Implication on Critical Thickness and Interface Structure;47
4.4;2.4 Virtual Substrates and Strain Relaxation;52
4.5;2.5 Further Reading;59
5;3. Resum´e of Semiconductor Physics;61
5.1;3.1 Quantum Mechanics;61
5.2;3.2 The Band Structure of Semiconductors;69
5.3;3.3 The Concentration of Carriers in a Semiconductor;83
5.4;3.4 Electronic Transport in a Semiconductor;99
5.5;3.5 Low Dimensional Physics: Quantum Wires and Dots;109
5.6;3.6 Lattice Vibrations and Phonons;113
5.7;3.7 Optical Properties of Semiconductors;119
5.8;3.8 The Continuity Equations Including Recombination and Generation;128
5.9;3.9 Further Reading;128
6;4. Realisation of Potential Barriers;129
6.1;4.1 Depletion layer and built in voltage;129
6.2;4.2 d-Doping and n-i-p-i Structures;131
6.3;4.3 Heterointerfaces (type I, type II), Abruptness and Height of Barriers;135
6.4;4.4 Influence of Strain on Bandstructure;146
6.5;4.5 Band Alignment of Strained SiGe;150
6.6;4.6 Further Reading;154
7;5. Electronic Device Principles;155
7.1;5.1 The p-n Junction;155
7.2;5.2 The Silicon Bipolar Transistor;162
7.3;5.3 Metal Oxide Semiconductor Field Effect Transistors MOSFETs;176
7.4;5.4 Further Reading;200
8;6. Heterostructure Bipolar Transistors - HBTs;201
8.1;6.1 Trade-off between current gain and speed;204
8.2;6.2 The High Speed SiGe HBT;205
8.3;6.3 The Linear Graded Profile;211
8.4;6.4 SiGe HBT Device Performance;214
8.5;6.5 Further Reading;218
9;7. Hetero Field Effect Transistors (HFETs);219
9.1;7.1 Vertical Heterojunction MOSFETs;222
9.2;7.2 Strained-Si CMOS;223
9.3;7.3 Metal-Gated MOSFETs;230
9.4;7.4 Modulation Doped Field Effect Transistors ( MODFETs);230
9.5;7.5 Further Reading;244
10;8. Tunneling Phenomena;247
10.1;8.1 Tunnel Diodes;247
10.2;8.2 Resonant Tunnelling;247
10.3;8.3 Real Space Transfer (RST) Devices;276
10.4;8.4 Single Electron Transistors and Coulomb Blockade;280
10.5;8.5 Further Reading;291
11;9. Optoelectronics;293
11.1;9.1 Photonic Devices;293
11.2;9.2 The Quantum Cascade Laser;308
11.3;9.3 Further Reading;321
12;10. Integration;323
12.1;10.1 The CMOS Inverter and MOS Memory Circuits;323
12.2;10.2 Silicon Process Technology;328
12.3;10.3 CMOS;339
12.4;10.4 Heterolayer Integration Issues;344
12.5;10.5 Bipolar and HBT Fabrication Processes;346
12.6;10.6 BiCMOS;349
12.7;10.7 Strained-Si CMOS;354
12.8;10.8 The System on a Chip;356
12.9;10.9 Fault Tolerant Architectures;356
12.10;10.10 Further Reading;358
13;11. Outlook;359
14;A. List of variables;365
15;B. Physical Properties of Important Materials at 300K;371
16;C. Fundamental Physical Constants;373