Buch, Englisch, Band 120, 199 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 335 g
The Influence of Multi-Valley Band Structures
Buch, Englisch, Band 120, 199 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 335 g
Reihe: Springer Series in Solid-State Sciences
ISBN: 978-3-642-63527-4
Verlag: Springer
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
1. Introduction to Semiconductor Band Structures.- 1.1 Electronic States in Crystalline Solids.- 1.2 Band Structure of III–V Semiconductors.- 1.3 Some General Properties of Multi-Valley Band Structures.- 2. Excitons in Multi-Valley Semiconductors.- 2.1 Basic Properties of Three-Dimensional Excitons.- 2.2 Direct-to-Indirect Crossover in Bulk Semiconductors.- 2.3 Exciton Dynamics in AlxGa1?xAs Near Crossover.- 2.4 Excitons in Low-Dimensional Structures.- 2.5 Direct-to-indirect Transitions in 2D and 1D Structures.- 3. Many-Body Effects in Multi-Valley Scenarios.- 3.1 Introduction to Screening in Highly Excited Semiconductors.- 3.2 Band-Gap Renormalization in Bulk Semiconductors.- 3.3 Gap Renormalization in Low-Dimensional Systems.- 3.4 Screening in One-Component Plasmas.- 3.5 Electron—Hole Droplet Formation.- 3.6 Optical Nonlinearities at the Direct Gap of Indirect-Gap Semiconductors.- 4. Intervalley Coupling.- 4.1 Theoretical Considerations.- 4.2 Optical Spectroscopy of Intervalley Coupling.- 4.3 Indirect Stimulated Emission.- 5. Summary and Outlook.- References.