Buch, Englisch, 330 Seiten, Format (B × H): 160 mm x 234 mm, Gewicht: 567 g
Reihe: MRS Proceedings
Buch, Englisch, 330 Seiten, Format (B × H): 160 mm x 234 mm, Gewicht: 567 g
Reihe: MRS Proceedings
ISBN: 978-1-55899-514-7
Verlag: CAMBRIDGE
This book focuses on the creative use of chemistry in the fabrication of a variety of oxide and non-oxide materials which are likely to play a crucial role in the development of the next generation of microelectronics devices. It includes inorganic precursor chemistry, gas-phase and solid-state chemistry, materials science, chemical physics and chemical engineering. Highlights include the deposition of high-k dielectric gate oxides, ferroelectric oxide films for infrared and memory applications, low-k dielectrics, TiN and TaN diffusion barriers, and fresh precursors for III-V nitrides. The emphasis is on chemical methods for the controlled deposition of thin films, for which chemical vapor deposition (CVD) has proven to be a useful and versatile technique. Of particular interest is the use of liquid-injection MOCVD for the deposition of oxide multilayers and superlattices. Solution deposition techniques such as sol-gel, metalorganic decomposition (MOD), hydrothermal processing are also prominently featured. Topics include: CVD of oxide ceramics; CVD of nonoxide ceramics; solution deposition of electronic ceramics; alternative chemical processing methods and characterization of electronic ceramics.
