Johnson / Ter Haar Men of Physics: Karl Lark-Horovitz

Pioneer in Solid State Physics
1. Auflage 2013
ISBN: 978-1-4831-8043-4
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 302 Seiten, Web PDF

Men of Physics: Karl Lark-Horovitz presents the biography of Karl Lark-Horovitz, a physicist who significantly contributed in the then-young field of experimental nuclear physics. This book discusses the Lark-Horovitz important work in structure determination by X-ray and electron diffraction methods. Organized into two parts encompassing 19 chapters, this book begins with an overview of the biographical account of Karl Lark-Horovitz. This text then describes Lark-Horovitz's creation of a highly regarded graduate program in physics at Purdue University, which is a feat involving both the acquisition of facilities in the face of enormous difficulties and the stimulation of young physicists to develop their talents. Other chapters consider Lark-Horovitz's personal efforts and achievements in the renascence and unfolding of the field now known as solid state physics. The final chapter describes the influence of physical phenomena on visual acuity and the apparent image size. This book is a valuable resource for physicists, teachers, and students.

Autoren/Hrsg.

Johnson, V. A.

Ter Haar, D.

Inhaltsverzeichnis

1;Front Cover;1
2;Men of Physics Karl Lark-Horovitz;4
3;Copyright Page;5
4;Table of Contents;6
5;Preface;8
6;PART 1: THE MAN;12
6.1;Chapter I. Introduction;14
6.2;Chapter II. The Early Years (1914–1928);17
6.3;Chapter III. Building a Department (1928–1941);19
6.4;Chapter IV. The Educator;33
6.5;V Pioneer in Solid State Physics (1942–1958);43
6.5.1;Epilogue;56
6.5.2;List of Publications;58
7;PART 2: HIS WORK;64
8;Chapter 1. Heteromorphies Due to the Variation of Effective Aperture and Visual Acuity;66
8.1;SUMMARY;72
8.2;NOTES;73
9;Chapter 2. A Permeability Test with Radioactive Indicators;75
9.1;SUMMARY;77
9.2;NOTES;77
10;Chapter 3. Electromotive Force of Dielectrics;78
10.1;NOTES;79
11;Chapter 4. Structure of Liquid Argon;80
11.1;NOTES;84
12;Chapter 5. Structure of the Wood Used in Violins;86
12.1;A Simple Method for Testing Homogeneity of Wood;87
12.2;NOTES;90
13;Chapter 6. Electron Diffraction Patterns;91
13.1;The Origin of the "Extra Rings" in Electron Diffraction Patterns;91
13.2;Intensity Distribution in Electron Diffraction Patterns;94
13.3;NOTES;99
14;Chapter 7. Fission of Uranium;100
14.1;Fission Tracks on the Photographic Plate;100
14.2;Uranium Fission with Li–D Neutrons: Energy Distribution of the Fission Fragments;101
14.3;NOTES;102
15;Chapter 8. Radioactive Indicators, Enteric Coatings and Intestinal Absorption;104
15.1;References;108
16;Chapter 9. Resistivity and Thermoelectric Power of Germanium Alloys (Abstracts of first post-war presentation of war-time research);109
16.1;Electrical Properties of Germanium Alloys.;109
16.2;Theory of Resistivity in Germanium Alloys;110
16.3;Electrical Properties of Germanium Alloys.;110
16.4;Theory of Thermoelectric Power in Germanium;111
17;Chapter 10. Transition from Classical to Quantum Statistics in Germanium Semiconductors at Low Temperature;112
17.1;Notes;114
18;Chapter 11. Theory of Thermoelectric Power in Semiconductors with Application to Germanium;116
18.1;ABSTRACT;116
18.2;I. INTRODUCTION;116
18.3;II. GENERAL EXPRESSION FOR THE THERMOELECTRIC POWER;118
18.4;III. THE INTRINSIC RANGE;121
18.5;IV. THE TRANSITION RANGE;125
18.6;V. THE IMPURITY RANGE;126
18.7;VI. COMPARISON WITH EXPERIMENT;129
18.8;NOTES;132
19;Chapter 12. Impurity Band Conduction in Germanium and Silicon;134
19.1;The Electrical Properties of Germanium Semiconductors at Low Temperatures;134
19.2;DISCUSSION;144
19.3;REFERENCES;148
19.4;Low Temperature Impurity Conduction in Silicon;148
19.5;1. INTRODUCTION;148
19.6;2. DISCUSSION OF THE SEPARATE RANGES OF IMPURITY CONDUCTION;149
19.7;3. INTRODUCTION OF IMPURITY COMPENSATION;150
19.8;REFERENCES;153
20;Chapter 13. Deuteron and Neutron Bombardment of Semiconductors (abstracts of first experimental work in this field);155
20.1;Deuteron-bombarded Semiconductors;155
20.2;Neutron-bombarded Germanium Semiconductors;155
20.3;REFERENCE;156
21;Chapter 14. Neutron Irradiation of Semiconductors;157
21.1;Neutron Irradiated Semiconductors;157
21.2;Transmutation-produced Germanium Semiconductors;160
21.3;Thermal Equilibrium in Neutron-irradiated Semiconductors;168
21.4;NOTES;170
22;Chapter 15. Nucleon-bombarded Semiconductors!;171
22.1;ABSTRACT;171
22.2;SEMICONDUCTORS PRODUCED BY TRANSMUTATION;173
22.3;LATTICE DEFECTS PRODUCED BY FAST NEUTRONS AND CHARGED PARTICLES;182
22.4;ELECTRON BOMBARDMENT OF GERMANIUM;198
22.5;TRANSIENT PROCESSES;204
22.6;SUMMARY;206
22.7;ACKNOWLEDGEMENTS;208
22.8;REFERENCES;209
22.9;APPENDIX I: EFFECT OF BOMBARDMENT UPON A CLASSICAL SEMICONDUCTOR IN THERMAL EQUILIBRIUM!;210
22.9.1;REFERENCES;215
22.10;APPENDIX II: FIRMI LEVELS IN BOMBARDED SEMicoNDUCTORS;216
23;Chapter 16. Localized Electronic States in Bombarded Semiconductors;222
23.1;ABSTRACT;222
23.2;I. INTRODUCTION;223
23.3;II. SUBSTITUTIONAL IMPURITIES AND INTERSTITIAL ATOMS AS DONATORS;227
23.4;III. VACANCIES IN POLAR CRYSTALS AS ACCEPTORS AND DONATORS;231
23.5;IV. VACANCIES IN GERMANIUM AS ACCEPTORS;232
23.6;V. EFFECT OF BOMBARDMENT OF GERMANIUM;237
23.7;VI. EFFECTS OF BOMBARDMENT OF SILICON;240
23.8;NOTES;242
24;Chapter 17. Fast Neutron Bombardment of Germanium;244
24.1;The Effect of Fast Neutron Bombardment on the Electrical Properties of Germanium;244
24.2;Evidence for Production of Hole Traps in Germanium by Fast Neutron Bombardment;264
24.3;NOTES;267
25;Chapter 18. The Effect of Neutron Bombardment on the Low Temperature Atomic Heat of Silicon;270
25.1;REFERENCES;273
26;Chapter 19. Fast Particle Irradiation of Germanium Semiconductors;274
26.1;ABSTRACT;274
26.2;1. INTRODUCTION;274
26.3;2. CORRELATION OF CHANGE IN CARRIER CONCENTRATION WITH ESTIMATED PRODUCTION OF DEFECTS;277
26.4;3. THE DEPENDENCE OF THE IRRADIATION EFFECT ON FERMI-LEVEL;279
26.5;4. LOCALIZED STATES IN IRRADIATED GERMANIUM;283
26.6;5. DEFECT PRODUCTION AS FUNCTION OF IRRADIATION;288
26.7;6. NON-EQUILIBRIUM DISTRIBUTION OF ELECTRONS IN LOCALIZED STATES;291
26.8;7. THERMAL ANNEALING BELOW ROOM TEMPERATURE;292
26.9;8. EFFECT OF IRRADIATION ON MOBILITY;295
26.10;REFERENCES;297
27;Index;300