Buch, Englisch, 599 Seiten, Format (B × H): 156 mm x 234 mm, Gewicht: 1110 g
Devices and Technology
Buch, Englisch, 599 Seiten, Format (B × H): 156 mm x 234 mm, Gewicht: 1110 g
Reihe: Devices, Circuits, and Systems
ISBN: 978-1-138-07266-4
Verlag: Taylor & Francis Ltd
With contributions from top international experts from both industry and academia, Nano-Semiconductors: Devices and Technology is a must-read for anyone with a serious interest in future nanofabrication technologies.
Taking into account the semiconductor industry’s transition from standard CMOS silicon to novel device structures—including carbon nanotubes (CNT), graphene, quantum dots, and III-V materials—this book addresses the state of the art in nano devices for electronics. It provides an all-encompassing, one-stop resource on the materials and device structures involved in the evolution from micro- to nanoelectronics.
The book is divided into three parts that address:
- Semiconductor materials (i.e., carbon nanotubes, memristors, and spin organic devices)
- Silicon devices and technology (i.e., BiCMOS, SOI, various 3D integration and RAM technologies, and solar cells)
- Compound semiconductor devices and technology
This reference explores the groundbreaking opportunities in emerging materials that will take system performance beyond the capabilities of traditional CMOS-based microelectronics. Contributors cover topics ranging from electrical propagation on CNT to GaN HEMTs technology and applications. Approaching the trillion-dollar nanotech industry from the perspective of real market needs and the repercussions of technological barriers, this resource provides vital information about elemental device architecture alternatives that will lead to massive strides in future development.
Zielgruppe
Professionals working in the industry (i.e. practicing engineers in the electronics field) and professors and senior students at universities.
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Section I: Semiconductor Materials
Electrical Propagation on Carbon Nanotubes: From Electrodynamics to Circuit Models
Monolithic Integration of Carbon Nanotubes and CMOS
Facile, Scalable, and Ambient—Electrochemical Route for Titania Memristor Fabrication
Spin Transport in Organic Semiconductors: A Brief Overview of the First Eight Years
Section II: Silicon Devices and Technology
SiGe BiCMOS Technology and Devices
Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm
Development of 3D Chip Integration Technology
Embedded Spin–Transfer–Torque MRAM
Nonvolatile Memory Device: Resistive Random Access Memory
DRAM Technology
Monocrystalline Silicon Solar Cell Optimization and Modeling
Radiation Effects on Silicon Devices
Section III: Compound Semiconductor Devices and Technology
GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology
GaN HEMTs Technology and Applications
Surface Treatment, Fabrication, and Performances of GaN-Based Metal–Oxide-Semiconductor High-Electron Mobility Transistors
GaN-Based HEMTs on Large Diameter Si Substrate for Next Generation of High Power/High Temperature Devices
GaAs HBT and Power Amplifier Design for Handset Terminals
Resonant Tunneling and Negative Differential Resistance in III-Nitrides
New Frontiers in Intersubband Optoelectronics Using III- Nitride Semiconductors
