III-Nitride Semiconductor Optoelectronics

Erscheinungsjahr 2017
ISBN: 978-0-12-809584-3
Verlag: ACADEMIC PR INC

Buch, Englisch, Band 96, 492 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 821 g

Reihe: Semiconductors and Semimetals

III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored.

Zielgruppe

<p>This volume is well suited for students and researchers in the field of semiconductors. It will be very valuable to researchers and engineers in the field of III-nitrides and optoelectronics. Moreover, the in-depth discussions on the growth and characterization of a broad range of semiconductor nanostructures will benefit students and researchers working on nanomaterials, nanotechnology, and emerging devices. </p>

Autoren/Hrsg.

Weitere Mitwirkende

Mi, Zetian

Jagadish, Chennupati

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik

Inhaltsverzeichnis

1. Materials Challenges of AlGaN-Based UV Optoelectronic DevicesM.H. Crawford2. Development of Deep UV LEDs and?Current Problems in Material and Device TechnologyM. Shatalov, R. Jain, T. Saxena, A. Dobrinsky and M. Shur3. Growth of High-Quality AlN on Sapphire and Development of AlGaN Based Deep-Ultraviolet Light-Emitting DiodesH. Hirayama4. III-N Wide Bandgap Deep-Ultraviolet Lasers and PhotodetectorsT. Detchprohm, X. Li, S.-C. Shen, P.D. Yoder and R.D. Dupuis5. Al(Ga)N Nanowire Deep Ultraviolet OptoelectronicsS. Zhao and Z. Mi6. Growth and Structural Characterization of Self-Nucleated III-Nitride NanowiresT. Auzelle and B. Daudin7. Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma Assisted Molecular Beam EpitaxyS. Albert, A.M. Bengoechea-Encabo, M.Á. Sánchez-García and E. Calleja8. InN Nanowires: Epitaxial Growth, Characterization, and Device ApplicationsS. Zhao and Z. Mi9. Dynamic Atomic Layer Epitaxy of InN on/in GaN and its Application for Fabricating Ordered Alloys in Whole III-N SystemK. Kusakabe and A. Yoshikawa10. Nitride Semiconductor Nanorod Heterostructures for Full-Color and White-Light ApplicationsS. Gwo, Y.-J. Lu, H.-W. Lin, C.-T. Kuo, C.-L. Wu, M.-Y. Lu and L.-J. Chen11. III-Nitride Electrically Pumped Visible and Near-Infrared Nanowire Lasers on (001) SiliconP. Bhattacharya, A. Hazari, S. Jahangir, W. Guo and T. Frost12. Exploring the Next Phase in Gallium Nitride Photonics: Cubic Phase Light Emitters Hetero-Integrated on SiliconC. Bayram and R. Liu

Über Autor(innen)

Jagadish, Chennupati
Chennupati Jagadish is an Australian Laureate Fellow and Distinguished Professor at Research School of Physics and Engineering at the Australian National University, Canberra. He published more than 800 papers (530 journal papers) and edited many books, chaired many conferences and served many professional societies e.g. President of IEEE Nanotechnology Council; Vice-President, IEEE Photonics Society, Vice-President and Secretary Physical Sciences, Australian Academy of Science. He won many awards, e.g. Peter Baume Award, Boas Medal, IEEE Third Millennium Medal, Distinguished Lecturer Awards from IEEE Photonics Society, IEEE Electron Devices Society and IEEE Nanotechnology Council, Electronics and Photonics Division Award from Electrochemical Society, Distinguished Service Awards from IEEE Nanotechnology Council and IEEE Photonics Society. His research interests are in compound semiconductor optoelectronics and nanotechnology. He has trained more than 45 PhD students and about 50 post-doctoral and research fellows. He holds honorary appointments at UESTC, Chengdu, Tokyo University, Nanjing University and Anna University. He has collaborated and co-authored papers with scientists from 25 countries. He serves as an Editor of 3 book series and 7 journals and a member of editorial boards of 17 journals.

Mi, Zetian
Zetian Mi is a Professor in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. He received the PhD degree in Applied Physics at the University of Michigan in 2006. His teaching and research interests are in the areas of III-nitride semiconductors, LEDs, lasers, quantum photonics, solar fuels, and artificial photosynthesis. Prof. Mi has edited 2 books, 12 book chapters, 20 patents/patent applications, more than 200 journal papers, and over 300 conference papers/presentations on these topics. He was a faculty member at McGill University from 2007 to 2016, where he received several awards, including the Hydro-Québec Nano-Engineering Scholar Award in 2009, the William Dawson Scholar Award in 2011, the Christophe Pierre Award for Research Excellence in 2012, and the Engineering Innovation Award in 2105. Prof. Mi has received the Young Investigator Award from the 27th North American Molecular Beam Epitaxy (MBE) Conference in 2010 and the Young Scientist Award from the International Symposium on Compound Semiconductors in 2015. Prof. Mi serves as the Editor of Progress in Quantum Electronics. He also served as the Associate Editor of IEEE J. Lightwave Technol. as well as the Chair of many international conferences, including the General Chair of IEEE Photonics Conference in 2020, General Chair of IEEE Photonics Society Summer Topicals Meeting in 2016-2017, and Co-Chair of International Symposium on Semiconductor Light Emitting Devices in 2017. Prof. Mi is a fellow of SPIE and OSA.