Process Technology for Semiconductor Lasers

Crystal Growth and Microprocesses
1. Auflage 2011
ISBN: 978-3-642-79578-7
Verlag: Springer

Buch, Englisch, 169 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 295 g

Reihe: Springer Series in Materials Science

Process Technology for Semiconductor Lasers describes the design principles of semiconductor lasers, mainly from the fabrication point of view. A review is given of the history of semiconductor-laser development and applications and of the materials used in lasing at short to long wavelengths. The basic design principles for semiconductor-laser devices and the epitaxy for laser production are discussed. An entire chapter is devoted to the technology of liquid-phase epitaxy, and another one to vapor-phase and beam epitaxies. The characterizations of laser materials and the fabrication and characteristics of semiconductor lasers are treated. Mode-control techniques are presented, and surface-emitting lasers are introduced in the final chapter.

Zielgruppe

Research

Autoren/Hrsg.

Iga, Kenichi

Kinoshita, Susumu

Inhaltsverzeichnis

1. Introduction.- 1.1 Outline of Semiconductor Laser Theory.- 1.2 Semiconductor Lasers in Opto-electronics.- 1.3 Necessary Technology for Semiconductor Lasers.- 1.4 Brief History of Semiconductor Lasers.- 1.5 Typical Semiconductor Lasers.- 2. Materials for Semiconductor Lasers.- 2.1 III-V Compound Semiconductors.- 2.2 Crystals for Visible to Near-Infrared-Wavelength Emission Semiconductor Lasers.- 2.3 Crystals for Semiconductor Lasers with 1-µm and Longer Emission Wavelengths.- 3. Basic Design of Semiconductor Lasers.- 3.1 Double Heterostructures and Their Design.- 4. Epitaxy of III–V Compound Semiconductors.- 4.1 III-V Substrates for Semiconductor Lasers.- 4.2 Bulk Growth Techniques.- 4.3 Heteroepitaxial Techniques.- 5. Liquid Phase Epitaxy and Growth Technology.- 5.1 Outline of an LPE System.- 5.2 Reactors.- 5.3 Loading Sub-System.- 5.4 Pump and Exhaust Sub-System.- 5.5 Gas-Flow Sub-System.- 5.6 Heating Sub-System.- 5.7 Maintenance.- 5.8 Liquid-Phase Epitaxy.- 5.9 LPE Process.- 6. Vapor Phase and Beam Epitaxies.- 6.1 Metal-Organic Chemical Vapor Deposition (MOCVD).- 6.2 Molecular-Beam and Chemical-Beam Epitaxy.- 7. Characterization of Laser Materials.- 7.1 Evaluation of Laser Wafers.- 7.2 Measurement of Lattice Mismatch.- 7.3 Measurement of the Impurity Concentration.- 7.4 Photoluminescence.- 7.5 Measurement of the Refractive Index.- 7.6 Misfit Dislocation.- 8. Semiconductor-Laser Devices — Fabrication and Characteristics.- 8.1 Fabrication of Fundamental Laser Devices.- 8.2 Current Injection and Contacts.- 8.3 Evaluation of the Threshold-Current Density.- 8.4 Gain Bandwidth and Oscillation Spectra.- 8.5 Output and Efficiency of Semiconductor Lasers.- 8.6 Near-Field Pattern and Far-Field Pattern.- 8.7 Temperature Characteristics.- 8.8 Reliability.- 9. Mode-ControlTechniques in Semiconductor Lasers.- 9.1 Transverse-Mode Characteristics and the Single-Mode Condition.- 9.2 Longitudinal-Mode Control.- 9.3 Burying Epitaxy on Mesas and V-Grooves.- 9.4 Mass-Transport Technique.- 9.5 Selective Meltback Technique.- 9.6 Overgrowth on Gratings.- 9.7 Growth of Quantum Wells.- 9.8 Growth of Multilayer Bragg Mirrors.- 10. Surface-Emitting Lasers.- 10.1 The Concept of Surf ace-Emitting Lasers.- 10.2 Structure and Characteristics.- 10.3 Semiconductor Multi-Layer Structure.- 10.4 Two-Dimensional Arrays.- 10.5 Ultralow-Threshold Devices.- 10.6 Future Prospects.- References.