Microscopy of Semiconducting Materials

Proceedings of the 14th Conference, April 11-14, 2005, Oxford, UK
2005
ISBN: 978-3-642-06870-6
Verlag: Springer

Buch, Englisch, Band 107, 540 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 1442 g

Reihe: Springer Proceedings in Physics

This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14 conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.

Zielgruppe

Research

Autoren/Hrsg.

Hutchison, John L.

Cullis, A.G.

Fachgebiete

• Naturwissenschaften Physik Elektromagnetismus Mikroskopie, Spektroskopie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde
• Naturwissenschaften Physik Physik Allgemein Experimentalphysik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie

Inhaltsverzeichnis

Epitaxy: Wide Band-Gap Nitrides.- Epitaxy: Silicon-Germanium Alloys.- Epitaxy: Growth and Defect Phenomena.- High Resolution Microscopy and Nanoanalysis.- Self-Organised and Quantum Domain Structures.- Processed Silicon and Other Device Materials.- Device Studies.- Scanning Electron and Scanning Probe Advances.