Nitride Semiconductor Light-Emitting Diodes (Leds)

Materials, Technologies, and Applications
2. Auflage 2017
ISBN: 978-0-08-101942-9
Verlag: Elsevier Science

Buch, Englisch, 822 Seiten, Format (B × H): 164 mm x 235 mm, Gewicht: 1310 g

Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed.

The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs.

It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.

Zielgruppe

<p>Researchers, engineers, and R&D engineers working in the fields of light emitting diode based solid state lighting technology or who are developing nitride devices; Manufacturers of computer monitors, cell phones, and tablets. Also could appeal to graduate students in materials science and engineering disciplines.</p>

Autoren/Hrsg.

Huang, Jian-Jang

Kuo, Hao-Chung

Shen, Shyh-Chiang

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

Part One Materials and fabrication 1. Molecular beam epitaxy (MBE) growth of nitride semiconductors 2. MOCVD growth of nitride semiconductors 3. GaN on sapphire substrates for visible light-emitting diodes 4. Gallium nitride (GaN) on silicon substrates for LEDs 5. Phosphors for white LEDs 6. Recent development of fabrication technologies of nitride LEDs for performance improvement 7. Nanostructured LED 8. Nonpolar and semipolar LEDs

Part Two Performance of nitride LEDs 9. Efficiency droop in GaInN/GaN LEDs 10. Photonic crystal nitride LEDs 11. Nitride LEDs based on quantum wells and quantum dots 12. Colour tuneable LEDs and pixelated micro-LED arrays 13. Reliability of nitride LEDs 14. Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 15. Chip packaging: encapsulation of nitride LEDs

Part Three Applications of nitride LEDs 16. White LEDs for lighting applications 17. Ultraviolet LEDs 18. Infrared emitters using III-nitride semiconductors 19. LEDs for liquid crystal display (LCD) backlighting 20. LEDs and automotive lighting applications 21. LEDs for large displays 22. LEDs for projectors

Über Autor(innen)

Kuo, Hao-Chung
Professor H. C. Kuo received the B.S. degree in Physics from National Taiwan University, Taiwan the M.S. degree in Electrical and computer engineering from Rutgers University in 1995, and the Ph.D. from Center of Compound Semiconductor Microelectronics (CCSM) of University of Illinois- Urbana Champaign in 1998. He has an extensive professional career both in research and industrial research institutions that includes: Research Consultant in Lucent Technologies, Bell Lab (1995-97); Member of Technical Staff in Fiber-optics Division at Agilent Technologies, USA (1999-2001) and Manager of LuxNet Corporation, USA (2001-2002). Since October, 2002 he joined National Chiao Tung University as a faculty member of Institute of Electro-Optical Engineering. Professor Kuo is a member of the IEEE and a recipient of Yang faculty Award from the Foundation for the Advancement of Outstanding Scholarship, he was author and co-author of 70 SCI journal papers and 80 international conference papers.

Shen, Shyh-Chiang
Shyh-Chiang Shen received his B.S. and M.S. degrees, both in electrical engineering, from National Taiwan University in 1993 and 1995, respectively. He received his Ph.D. degree in electrical engineering at the University of Illinois at Urbana-Champaign (UIUC) in 2001. During his graduate study at the University of Illinois, he was involved in the development of low-voltage RF MEMS switches and ion-implanted GaAs MESFET using e-beam direct gate-writing photolithography techniques.
Dr. Shen joined Xindium Technologies, Inc. as a senior processing engineer in June 2001. He developed a proprietary high-performance InP SHBT technology for 40Gb/s OEIC applications and InP-based power HBT technology for wireless communications. In August 2004, he joined the HSIC group at the University of Illinois as a postdoctoral research associate to work on exciting research projects. In January 2005, he joined the Georgia Institute of Technology as an Assistant Professor. Dr. Shen holds 7 awarded U.S. patents in the MEMS and microelectronics areas. His current research is focused on wide bandgap semiconductor microelectronics and optoelectronic devices for high-energy-efficiency applications.