Hu / Agarwal / Gupta BSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-Voltage

1. Auflage 2023
ISBN: 978-0-323-85678-2
Verlag: Elsevier Science & Techn.
Format: EPUB
Kopierschutz: 6 - ePub Watermark

E-Book, Englisch, 270 Seiten

Reihe: Woodhead Publishing Series in Electronic and Optical Materials

BSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-Voltage provides in-depth knowledge of the internal operation of the model. The authors not only discuss the fundamental core of the model, but also provide details of the recent developments and new real-device effect models. In addition, the book covers the parameter extraction procedures, addressing geometrical scaling, temperatures, and more. There is also a dedicated chapter on extensive quality testing procedures and experimental results. This book discusses every aspect of the model in detail, and hence will be of significant use for the industry and academia. Those working in the semiconductor industry often run into a variety of problems like model non-convergence or non-physical simulation results. This is largely due to a limited understanding of the internal operations of the model as literature and technical manuals are insufficient. This also creates huge difficulty in developing their own IP models. Similarly, circuit designers and researcher across the globe need to know new features available to them so that the circuits can be more efficiently designed. - Reviews the latest advances in fabrication methods for metal chalcogenide-based biosensors - Discusses the parameters of biosensor devices to aid in materials selection - Provides readers with a look at the chemical and physical properties of reactive metals, noble metals, transition metals chalcogenides and their connection to biosensor device performance

Chenming Hu is TSMC Distinguished Chair Professor Emeritus at the University of California Berkeley, United States. He was the Chief Technology Officer of TSMC. He received the US Presidential Medal of Technology and Innovation from Pres. Barack Obama for developing the first 3D thin-body transistor FinFET, MOSFET reliability models and leading the development of BSIM industry standard transistor model that is used in designing most of the integrated circuits in the world. He is a member of the US Academy of Engineering, the Chinese Academy of Science, and Academia Sinica. He received the highest honor of IEEE, the IEEE Medal of Honor, and its Andrew Grove Award, Solid Circuits Award, and the Nishizawa Medal. He also received the Taiwan Presidential Science Prize and UC Berkeley's highest honor for teaching - the Berkeley Distinguished Teaching Award.

Autoren/Hrsg.

Hu, Chenming

Agarwal, Harshit

Gupta, Chetan

Chauhan, Yogesh Singh