E-Book, Englisch, Band 34, 352 Seiten, eBook
Hori Gate Dielectrics and MOS ULSIs
Erscheinungsjahr 2012
ISBN: 978-3-642-60856-8
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark
Principles, Technologies and Applications
E-Book, Englisch, Band 34, 352 Seiten, eBook
Reihe: Springer Series in Electronics and Photonics
ISBN: 978-3-642-60856-8
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark
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Professional/practitioner
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Content.- 1. Introduction.- 1.1 The History of Silicon MOS Devices.- 1.2 Scaling Issues in ULSIs.- 1.3 Requirements on Gate Dielectrics: Depending on Applications.- 2. MIS Structure.- 2.1 Ideal MIS System.- 2.2 Real System: Si-SiO2 MOS Technology.- 2.3 Carrier Transport in Dielectric Films.- 2.4 Electrical Measurements.- (a) Film Thickness.- (b) Work Function and Fixed-Charge Density.- (c) Interface-State Density.- (a) High-Frequency Method.- (b) Transient Spectroscopy.- (c) Charge-Pumping Method.- (a) Carrier Injection.- (b) Trap Density and Capture Cross Section.- (c) Distribution of Traps.- 3. MOS Field-Effect Transistor.- 3.1 Classical MOS Transistor.- 3.2 MOSFET Parameters.- (a) n-FETs with VT Adjustment.- (b) Buried-Channel p-FETs.- (a) Velocity Saturation Along the Lateral Field.- (b) Inversion-Layer Mobility.- (c) Universal Relation for the Effective Normal Field.- 3.3 Scaling.- (a) Small-Geometry Effects.- (b) Limited Performance Under High Fields.- (c) Hot-Carrier Effects and Drain Engineering.- (d) Gate-Induced Drain Leakage.- (e) Dielectric Reliability and Gate Electrodes.- 3.4 Device Integration.- 4. Thermally Grown Silicon Oxide.- 4.1 Processing.- 4.2 Electrical and Physical Characteristics.- 4.3 Charge-Trapping Characteristics.- 4.4 Dielectric Breakdown.- (a) Intrinsic Breakdown.- (b) Extrinsic Breakdown.- (c) Thickness Dependence.- (a) Electrode-Related Breakdown.- (b) Isolation-Related Breakdown.- (c) Oxide Integrity Degradation Near Gate Edges.- (d) Nonvolatile Memories.- 4.5 Hot-Carrier-Induced Degradation.- 4.6 Other Silicon Oxides.- 4.7 Summary and Future Trends.- 5. Thermally Nitrided Oxides: for Flash Memories.- 5.1 Processing and Material Properties.- (a) Processing Issues.- (b) Rapid Thermal Processing.- (c) Nitridation of SiO2.- 5.2 ElectricalCharacteristics and Performance.- (a) Electron Mobility.- (b) Hole Mobility.- (c) Discussion on the.Mobility Modulation.- 5.3 Dielectric Reliability.- (a) Dependence on the Fabrication Condition.- (b) A Model for Electron Trapping.- (c) A Model for Interface-State Generation.- (a) Charge-to-Breakdown.- (b) Extrinsic Breakdown.- (a) Nonvolatile Memories.- (b) CMOSFETs with Advanced Gates.- 5.4 Issues Inherent to Scaled MOSFETs.- (a) Substrate and Gate Current.- (b) Hot-Carrier-Induced Degradation.- (c) Device Lifetime.- 5.5 Summary and Outlook.- 6. High-Dielectric Constant Films: for Passive Capacitance.- 6.1 Silicon Nitride (Si3N4).- 6.2 Tantalum Oxide (Ta2O5.- 6.3 Ferroelectrics.- (a) Ferroelectric Properties.- (b) Issues Common to ULSI Applications.- References.
