Buch, Englisch, 640 Seiten, Format (B × H): 175 mm x 248 mm, Gewicht: 1324 g
Buch, Englisch, 640 Seiten, Format (B × H): 175 mm x 248 mm, Gewicht: 1324 g
ISBN: 978-0-08-044502-1
Verlag: Elsevier Science
- It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas.
- Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community.
The high speed lasers operating at wavelength of 1.3 µm and 1.55 µm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers.
In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development.
Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics
Zielgruppe
Post-graduate students, researchers in the field of semiconductors and Optoelectronics and electronic devices and semiconductor manufacturers,
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Preface
Chapter 1: MBE Growth and Characterization of Long Wavelength Dilute Nitride Nitride III-V Alloys
Chapter 2: Epitaxial Growth of Dilute Nitrides by Metal-Organic Vapour Phase Epitaxy
Chapter 3: The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors
Chapter 4: MOMBE Growth and Characterization of Nitride III-V-N Compounds and Application to InAs Quantum Dots
Chapter 5: Recent Progress in Dilute Nitride Quantum Dots
Chapter 6: Physics of Isoelectronic Dopants in GaAs
Chapter 7: Measurement of Carrier Localization Degree, Electron Effective Mass, and Excition Size in InxGa1-xAs1-yNy Alloys
Chapter 8: Probing the "Unusual� Band Structure of Dilute Ga(AsN) Quantum Wells by Magneto-Tunnelling Spectroscopy and Other Techniques
Chapter 9: Photo- and Electro-reflectance of III-V-N Compounds and Low Dimensional Structures
Chapter 10: Band Anticrossing and Related Electronic Structure in III-N-V Alloys
Chapter 11: A Tight-Binding Based Analysis of the Band Anti-Crossing Model and Its Application in Ga(In)NAs Alloys
Chapter 12: Electronic Structure Evolution of Dilute III-V Nitride Alloys
Chapter 13: Theory of Nitrogen-Hydrogen Complexes in N-Containing� III-V Alloys
Chapter 14: Dislocation-free� III-V-N Alloy Layers on Si Substrates and Their Device Applications
Chapter 15: GaNAsSb Alloy and its Potential for Device Applications
Chapter 16: A Comparative Look at 1.3 �m InGaAsN-based VCSELs for Fiber-optical Communication Systems
Chapter 17: Long-wavelength Dilute Nitride-Antimonide Lasers
Chapter 18: Application of Dilute Nitride Materials to Heterojunction Bipolar Transistors
Index
