Sonstiges, Englisch, 1722 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 1722 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03859-796-4
Verlag: Trans Tech Publications
This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.
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Weitere Infos & Material
Defects in Heterogeneous Solids - From Microphysics to Macrophysics35 Years of Defects in Semiconductors: What Next?Optical Spectroscopy of Defects in Diamond: Current Understanding and Future ProblemsIsotope Dependence of the Frequency of Localized Vibrational Modes in DiamondNative Paramagnetic Defects in Diamond FilmsTitanium Impurity in DiamondTheory of Nitrogen Aggregates in Diamond: The H3 and H4 DefectsNitrogen and Nitrogen-Vacancy Complexes in DiamondTime Resolved Photoluminescence and Optically Detected Magnetic Resonance Investigations on Synthetic DiamondEndor and ODEPR Investigation of the Microscopic Structure of the Boron Acceptor in 6H-SiCNitrogen Donors, Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide (4H-SiC)Magnetic Circular Dichroism and Optically Detected EPR of a Vanadium Impurity in 6H-Silicon CarbideBoron in Cubic Silicon Carbide: Dynamic Effects in ESRODMR Studies of MOVPE-Grown GaN Epitaxial LayersIron Acceptors in Gallium Nitride (GaN)Donors in Wurtzite GaN Films: A Magnetic Resonance and Photoluminescence StudyThe Bound Exciton Model for Isoelectronic Centers in SiliconNear-Surface Reactions of Gold and Silver in SiliconA New Photoluminescent Center in Mercury-Doped SiliconElectrical and Optical Characterization of Magnesium- and Calcium-Related Defect Centers in Silicon Fast Neutron Transmutation Reactions in Si - A New Way of Introduction of Mg-Related CentersBehaviour of Boron After Implantation into Silicon-Schottky Diodes: A ?-NMR Study on the Fermi-Level Dependence EPR/ENDOR Investigation on the Nature of Heat Treatment Centers in Silicon Role of Point Defects in Oxygen Agglomeration in SiDLTS Studies of Thermally Treated Carbon-Rich SiliconA Metastable Selenium-Related Center in SiliconThe Excited 5T1 State of the Feio -Center in SiliconIdentification of the Iron-Boron Line Spectrum in SiliconAb-Initio Total Energy Calculation of Iron-Aluminum Pairs in SiliconOn the Sensitivity of Optical Reflectivity Spectra to the Bulk Defects in Semiconductors - Example of Crystalline SiDetection of Defects Responsible for Lifetime in p-Type SiSpin Dependent Photoconductivity in Silicon-on-SapphireGroup-V Antisite Defects, VGa, in GaAsElectronic Structure of PIn Antisite in InPOn the Microscopic Structures of Three Different Arsenic Antisite-Related Defects in Gallium Arsenide Studied by Optically Detected Electron Nuclear Double ResonanceThe Electron Irradiation Induced Defect E1,E2 in GaAs: Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model The Assignment of the 78/203meV Double Acceptor in GaAs to BAs Impurity Antisite Centers Interaction of Atomic Hydrogen with Arsenic Antisites and Arsenic Interstitials in Gallium Arsenide Incorporation of Be Into Inx Ga1-x As (0.004=x=0.17) Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational ModesInfrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:CTheory of Carbon Complexes in Gallium Arsenide and Aluminium ArsenideIncorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam EpitaxySi Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAsThe Lattice Location and Electrical Activity of Ion-Implanted Sn in InPNitrogen-Hydrogen Complexes in GaP and GaAsRecombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium ArsenideDirect Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78AsDefects in Electron Irradiated GaP and GaInPPositron Lifetime Investigations of Electron Irradiated InPStudy of Indium Implanted GaAs: Positron Annihilation and Electrical MeasurementsFine Structure of the (Fe2+, h) Bound States in GaP and InPNew Evidence for Bound States in the Charge Transfer Spectra of Transition-Metal-Doped III-V SemiconductorsFTIR Absorption and Photoluminescence Study of a New Defect System in GaP:Fe:SNew Aspects of (Semi-Insulating) GaP:CuIsotopic Structure and the Jahn-Teller Effect in Fe-Doped III-V Materials Native Vacancies in Semi-Insulating GaAs Observed by Positron Lifetime Spectrocopy under PhotoexcitationPositron Annihilation at Ionized Acceptors and Vacancies in Indium Phosphide After Electron IrradiationProperties of Important Deep Level T3 in Semi-Insulating Gallium ArsenideElectron and Hole Traps in AlAs p+-n Junctions Grown by MBEFrenkel Pairs in GaAs and InPLattice Properties of GaAs Layers Grown by MBE Method at Low Temperature Semiconductor Luminescence and Effects of Excitation TransferDoping of Wide-Gap II-VI Compounds for Short-Wavelength Visible Light Emitting DevicesMetal Vacancies in Li and In Doped ZnSe and CdSThe Identification of Intrinsic Vacancy Defects in CdTePhotoluminescence and Optically Detected Magnetic Resonance Investigations on the Indium A-Center in CdTe:InIndium Donor Complexes with Cation Vacancies in CdTe and ZnSeEnergy Transfer between Fe2+ Centers in Polymorphic ZnSElectron Nuclear Double Resonance Investigations on the Tellurium Vacancy in CdTeFrenkel Pairs on the Te Sublattice of ZnTe? An ODMR StudyStudy of Vacancy Defects in II-VI Compouds by Means of Positron AnnihilationOptical and Magnetic Properties of Titanium Ions in CdTe and (Cd, Zn)Te Time-Resolved Excitation Spectroscopy of Red-Luminescence in ZnSe:Te Incorporation and Interaction of Hydrogen with Acceptor Impurities in II-VI Semiconductor CompoundsLigand Induced Isotope Shifts of Transition Metal Centers in ZnOMetal Vacancies in Li and In Doped ZnSe and CdSA Positron Annihilation Study of Defects in ZnO and Their Relation to Luminescence CentersDefect Control in Relaxed, Graded GeSi/SiOrigin of Mosaic Structure in Relaxed Si1-xGex Layers Point Defects in SiGe Epitaxial Layers and Bulk CrystalsDefect Characterization in P Isotype Si/SiGe/Si Heterostructures by Space Charge SpectroscopyTest for the Impurity Wavefunction Modelling from the Alloy Broadening of the Impurity-Related LuminescenceStrain Relaxation During Epitaxial Crystallization of GexSi1-x Alloy Layers Produced by Ion-ImplantationRapid Thermal Annealing of Ion Implanted Strained Si1-xGexDiffusion, Interface Mixing and Schottky Barrier FormationStrain Relaxation in Thin ZnTe Epilayers on GaAs and ZnSe/GaAs1D Properties of Straight Dislocation Segments in Si and GeMetastable Surface Defects in p-Type GaAsRaman Study of Misfit Dislocations in ZnSe/GaAs StructuresElectronic Properties of the (001) Surface of Diamond Covered with HydrogenCharacterization of Semiconductor Surfaces and Interfaces by X-Ray Reflectivity MeasurementsSpatial Confinement of Misfit Dislocations at the Interfaces of Epitaxial CdSe/GaAs(111) and ZnTe/GaAs(111) Studied by TEMCoulomb Energy of Traps in Semiconductor Space Charge RegionsEffect of Interface on Capture and Emission Processes via Deep CentersHeteroepitaxy of GaAs on Porous Silicon: The Structure of the InterfaceEvidence for an Assisted Defect Mechanism Leading to a Reduced Apparent Band OffsetImpurity-Enhanced Disordering in SuperlatticesExciton Spectroscopy of Near-Surface GaAs/Al0.3Ga0.7As Quantum Wells - The New Method of Band Bending InvestigationThermally Induced Compositional Disordering of InGaAs/GaAs and GaAsSb/GaAs Single Quantum WellsAlloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb Single Quantum WellsTuning of 2DEG Mobility by Modification in Ordering of Remote Impurity Charges in GaAs/AlGaAs HeterostructuresDX Centers in Reduced Dimensionality n-Type AlGaAs StructuresNon-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum WellsPhotoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs SurfacesInfluence of DX Center Structure on Si Modulation d-Doping in AlGaAs/GaAs Quantum WellsSi Diffusion out of d-Planes in a GaAs SuperlatticeLuminescence of a Delta Doping Related Exciton in GaAs:SiConfinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum WellsThe Influence of Silicon Diffusion on the Transport Properties of the 2DEG in Si d-Doped GaAsElectronic States of n-Type d-Doping in GaAs HeterostructuresPhonon Spectroscopy of Defects Correlated with the Diffusion of Zn into Si High Spectral Resolution Study of Shallow Donors in GaInAsThe Influence of Spin and Composition Fluctuations on Shallow Donor States in Semimagnetic SemiconductorsSc Impurity in CdSe and Cd1-xMnxSeThe Theory of Rare-Earth Impurities in SemiconductorsThe Physics and Application of Si:Er for Light Emitting DiodesPL and EPR Studies of Er-Implanted FZ- and CZ-SiIonization Energies of Rare Earth Impurities in III-V and II-VI Semiconductor CompoundsEfficiency of Rare Earth Intra-4f-Shell Luminescence in InPPressure-Induced Recovery of the 4f-Shell Luminescence of Yb Doped in InP at Near Room TemperatureEnergy Levels and Excitation Mechanisms of Yb3+ Ions in InP1-xAsx Alloys Time Decay Study of the Er3+-Related Luminescence in In1-xGaxPEr-4f Luminescence Excitation and Quenching Mechanisms in GaAsPhotoluminescence Study of the 779-meV Band in Silver-Doped SiliconDiffusion and Electrical Properties of 3d Transition-Metal Impurity Series in SiliconLattice Relaxation Accompanying the Photoionization of Deep Transition-Metal Impurity in SemiconductorPhotoluminescence from Silver-Related Defects in SiliconElectronic Structure of Copper-Related Defects in GermaniumThermodynamic Properties of Self-Interstitials in Silicon: An Experimental Investigation Shallow Bound Pseudoacceptor States of Iron in Gallium PhosphideAn Optical Zeeman Study on Fe3+ in GaAs and InPUnusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion ImplantationElectrical and Optical Properties of 3D- and 4D-Transition Metal Related Centers in SiliconNonlinear Zeeman Splitting and Electron-Phonon CouplingHydrogen-Gold-Related Deep Levels in Crystalline SiliconIn Search of Co-Acceptor Pairs in Highly Doped p-Si: A M?ssbauer Spectroscopy StudyStudies of 3D Ions in III-V Materials by Thermally-Detected Absorption Spectroscopy-Problem of GaP:CrCharacterization of Defects in Li-Diffused n-Type GaAsObservation and Theory of the H2* Defect in Silicon EPR Identification of Hydrogen Molecules in Bulk SiliconHydrogen Solubility and Defects in SiliconDiffusion of Charged Hydrogen in SemiconductorsMetastable Defects in N-Type GaAs Related to HydrogenInterpretation of Large Attempt Frequencies in Dissociation of Thermal Donor-Hydrogen Complexes in SiliconIsotope Shift for the Low Energy (63cm-1) Excitation of the Al-H Complex in Si: Evidence for a Hydrogen Wagging ModeSpectroscopic Identification of a Transition Metal-H Complex in SiliconStructural Study of Hydrogen Induced Platelet in Si and Ge by Transmission Electron MicroscopyHydrogen Related Optical Centers in Radiation Damaged SiliconEPR Experiments on Hydrogen-Implanted Silicon Crystals: Annealing Properties of Bond Center HydrogenCharge and Site-Change Dynamics of Muonium (Hydrogen) in SiPhoto-Induced Lattice Relaxation and Dissociation of a Hydrogen-Carbon Complex in SiliconInteraction between X-H Bonds and the Lattice in III-V Compounds Determined from Temperature-Dependent Spectroscopic StudiesDepth Distribution of Diffused Hydrogen in n-Type GaAsDeep Levels of Vanadium- and Chromium-Hydrogen Complexes in SiliconDeuterium Effusion from InPPosition of the Hydrogen Acceptor Level in n-GaAs:Si and n-AlGaAs:Si Deduced from Hydrogen Diffusion Modelling Effect of Carbon on Anharmonic Vibration of Oxygen in Crystalline SiliconThe Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350?C and 500?CA Piezo-Spectroscopic Study of Oxygen-Vacancy Centers in SiliconHydrostatic Pressure Investigations of Metastable Defect StatesVacancy in the EL2 and DX Centers Studied by Positron AnnihilationTheoretical Calculations of Antisite and Antisite-Like Defects in GaPPressure Dependences of Transition Energies of the As Antisite and the Ga-Vacancy-As-Interstitital Pair Compared to Stable and Metastable EL2Fine Structure Observed in Thermal Emission Process for the EL2 Defect in GaAsOrdering of the EL2 Defects in the Metastable StateCoexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC ConditionsDirect Evidence for Two-Electron Occupation of Ge-DX Centers in GaAsPhotoexcited and Metastable States of DX Centers in Si Doped Alx Ga1-x As Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and SuperlatticesAb-Initio Calculation of the Hyperfine Fields for Deep A1 Donors in GaAs under Pressure Magneto-Optical and ODEPR Investigations of Silicon Doped AlxGa1-xAs First Observation of a Metastable Character of Irradiation-Induced Defects in GaAs-GaAlAs SuperlatticesSymmetry of the Acceptor-Like State of the EL2 Defect in the Metastable ConfigurationThe Ultrasonics-Induced-Quenching of PPC Related to DX Centers in AlxGa1-xAsInfluence of Ultrasound Vibrations on the Stable-Metastable Transitions of EL2 Centers in GaAsElectron-Phonon Coupling at Deep-Level Defects and the Metastable Transition of EL2Pressure Induced *-Shallow - Deep A1 Transition for Group VI:S, Se, and Group IV:Ge Donors in GaAsProperties of Resonant Localized Donor Level in Low-Temperature-Grown InPKinetics of Electron Capture on DX Centers under High PressureStatic and Dynamic Absorption Measurements of the DX Center in AlxGa1-xAsVacancy Related Metastable Defects in III-V Semiconductors - A Study of the EL2 and DX Center by Positron Annihilation, Photoconductivity and Infrared Spectroscopy Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al.3Ga.7As by M?ssbauer SpectroscopyHole Capture by the DX Center in AlGaAs Schottky BarriersEnergy Shifts Due to the Local Environment of DX Centers in Alx Ga1-x As:Si Evidence for Alloy Splitting of the Te DX State in AlxGa1-xAsReduction of Spatial Correlations Amongst DX Charges Owing to Capture of Photoexcited Electrons into a Localized Donor State in Al0.35Ga0.65AsThe DX-Centers Related Mobility in AlGaAs: Charge Correlation and Multilevel-Structure EffectsStudy of PPC in AlGaAs/GaAs Heterostructures. Discovery of an Excited State of the DX Center at 0.65 eV.On the Electron Capture Kinetics of DX Centers in AlxGa1-xAs:SiDefect Interaction with the Double Donor 77Br in GaAs and InAsCoexistence of the DX0 and DX-State in Heavily Doped GaAs:Si ?The Metastable Si:(S + Cu) DefectThe Structure of Au-Li and Pt-Li Complexes in SiliconThe Configurational Change of a Metastable S-Cu Defect in SiliconA New Bistable Shallow Thermal Donor in Al-Doped SiMetastable-Defect Behaviors of Iron-Boron Pairs in SiliconMetastability of the Ali-AlSi Pair in Silicon?DX-Like Centers in II-VI Diluted Magnetic SemiconductorsTunneling Study of Metastable Electron States Produced by Reconstructing Impurity Centers in PbTe:InPassivation and Reactivation of (H,P) Pairs in SiThe Nitrogen Pair in Crystalline Silicon Studied by Ion ChannelingVacancies and {V,Hn} Complexes in Si: Stable Structures, Relative Stability, and Diffusion Properties The Nature of Trigonal Centers in Iron-Doped p-Type SiliconAnnealing of Electron Irradiated P-, As-, Sb- and Bi-Doped Czochralski SiliconRelative Stability of HT vs. H* and HT2 vs. H*2 in c-C, Si, Ge and a-Sn and Their Consequences On the Pairing between Indium and Carbon Atoms in SiliconIron-Phosphorus Interaction in SiVacancy-Assisted Diffusion of Si in GaAs: Microscopic TheoryPolarized Photoluminescence in Highly Si-Doped GaAsPhenomenon of Two-Step Alignment of VGaSnGa Complexes in GaAs under Uniaxial PressurePhotoexcitation of Defects Related to B in GaAsMagnetotunnelling through 1s- and 2p-Like Donor States in the Quantum Well of Resonant-Tunnelling DiodesTheoretical Study on the Electronic States of Dislocations and Dislocation Motion in SemiconductorsAb Initio Cluster Theory of Substitutional Oxygen in SiliconFirst-Principles Simulations of Vacancies and Antisites in InPScanning Tunneling Microscopy and Spectroscopy of Arsenic Antisite Defects in GaAsScanning Tunneling Microscopy of Si Donors in GaAsX-Ray Triple Crystal Diffractometry of Structural Defects in SimGen SuperlatticesGIXA, a Novel Technique in Near-Surface AnalysisElectrically Detected Electron Paramagnetic ResonanceMagnetic Resonance Techniques for Excited State Spectroscopy of Defects in SiliconOptically Detected Cyclotron Resonance for Defect CharacterizationSpin Dependent Recombination: An Improved Theory Applied to Deep Centers in SiliconContactless Photothermal Ionization Spectroscopy of Shallow Defects in SemiconductorsObservation of Rapid Direct Charge Transfer between Deep Defects in SiliconDetection of Nonradiative Transition in P++ Ion Implanted p-Si by a Photoacoustic SpectroscopyDLTS of Recombination Centres in SemiconductorsRaman Study of 'Boson Peak' in Ion-Implanted GaAs: Dependence on Ion Dose and Dose RateA Model for Anharmonic Vibrational Excitation of -Bond-Interstitial Impurities in Si and Ge CrystalsReactions of Gallium Vacancies during Annealing and Zn Diffusion in GaAs: SiDefect Concentration Gradients at Semiconductor JunctionsDiffusion of Mn-Atoms during the Growth of CdTe-MnTe SuperlatticesParticularities of the Zn Diffusion into InGaAsP from Spin-On Polymer FilmsU-Shaped Diffusion Profiles of Zn Atoms in GaAs by Electron Beam DopingZinc Diffusion in Gallium AntimonideEvidence of Fast Diffusion of Plasma-Induced Centers in GaAs by Photo-Reflectance SpectroscopyInfluence of Spatial Coulomb Potential Fluctuations on the Mobility in AlxGa1-xAs with DX CentersImpurity Self-ScreeningDefects and Recombination in Disordered SiliconOptically Detected Magnetic Resonance Investigations on Rapidly Thermally Oxidized Porous SiliconThe Relative Importance of Radiative and Non Radiative Recombinations in the Luminescence of Porous SiliconAssociation of Non-Radiative ODMR with the Non-Visible Emitting Regions within Porous-SiElectrical Characterization of Surface Defects on Porous p-Type SiliconLuminescence due to Oxygen Induced Chemical Confinment on a Silicon SurfaceDefects in As-Prepared and Thermally Oxydized Porous SiliconCarbon as a Probe of Edge-Defined Film-Fed Growth SiliconLuminescence Associated with Rod-Like Defects in Czochralski SiliconPhase Transitions at the Amorphous/Crystalline Interface in Ion-Implanted Silicon and Their Role in End-of-Range Defect FormationAu-Related Deep States in the Presence of Extended Defects in N-Type SiliconInteraction between Supersaturated Transition Metals (Cu, Ni, Fe) and Extended Defects in CZ-SiControl of Size and Density of Stacking Fault in Silicon by Gold DiffusionOn the Influence of Transition Metal Impurities on the Oxygen Precipitation in CZ-Grown SiliconImplantation of Carbon in GaAs and Compensating Native DefectsThe Influence of Process-Induced Surface Defects on Luminescence and Transport Properties of Low-Dimensional StructuresDeep Level Defects Detection in Degrading GaAs/AlGaAs Quantum Well LaserInfluence of Electron Irradiation Induced Defects on the Current-Voltage Characteristics of a Resonant Tunneling DiodeElectronic Properties of Defects Introduced during Electron and Alpha Irradiation of GaAsInfluence of Micro-Inhomogeneities on the Electron Mobility in Undoped N-Type LEC GaAsDislocation-Induced Defect Levels in SiliconStructure Investigations of Heteroepitaxial CoSi2/Si Layers Formed by Ion ImplantationOxygen Clusters in As-Grown Cz-Si Crystals Probed by Positron AnnihilationRelation between Dislocation Motion and Formation of Intrinsic Point DefectsThe Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si (001) SubstratesCharacterization of EL2 in Annealed LT-GaAsTheory of Dislocations in GaAsElectrical Properties of Organometallic Vapour Phase Epitaxial GaAs Grown on Si SubstratesStrain and Relaxation in ZnSe/CdSe SuperlatticesStrain Induced Islanding of EuTe Epitaxial Films Observed by In-Situ-Rheed and STM InvestigationsInfluence of Oxygen on External Phosphorus Gettering in Disordered Silicon WafersBinding of Copper to Nanocavities in SiliconPhosphorus Diffusion Gettering of Gold in SiliconThe Diffusion of Gold during the Gettering Influence of PhosphorusEffect of Interfacial Hydrogen in CoSi2/Si(100) Schottky-Barrier ContactsEPR Study of Platinum-Hydrogen Complexes in Silicon
