Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN

Softcover Nachdruck of the original 1. Auflage 2016
ISBN: 978-3-662-57072-2
Verlag: Springer

Buch, Englisch, 690 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 1042 g

This book introduces the basic framework of advanced focal plane technology based on the third-generation infrared focal plane concept. The essential concept, research advances, and future trends in advanced sensor arrays are comprehensively reviewed. Moreover, the book summarizes recent research advances in HgCdTe/AlGaN detectors for the infrared/ultraviolet waveband, with a particular focus on the numerical method of detector design, material epitaxial growth and processing, as well as Complementary Metal-Oxide-Semiconductor Transistor readout circuits. The book offers a unique resource for all graduate students and researchers interested in the technologies of focal plane arrays or electro-optical imaging sensors.

Zielgruppe

Research

Autoren/Hrsg.

He, Li

Ni, Guoqiang

Yang, Dingjiang

Fachgebiete

• Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Nachrichten- und Kommunikationstechnik
• Technische Wissenschaften Technik Allgemein Technische Optik, Lasertechnologie
• Naturwissenschaften Physik Elektromagnetismus Quantenoptik, Nichtlineare Optik, Laserphysik

Inhaltsverzeichnis

Fundamentals of focal plane arrays.- Design Methods for HgCdTe infrared Detectors.- CdTe/Si composite substrate and HgCdTe epitaxy.- AlGaN Epitaxial Technology.- HgCdTe Detector Chip Technology.- Chip Technique of AlGaN Focal Plane Arrays.- Readout Integrated Circuit, Measurement and Testing Technology for Advanced Focal Plane Array.

Über Autor(innen)

Li He received his B.S. degree from Nanjing University of Posts and Telecommunications in 1982, his M.S. in Electrical Engineering from the University of Electro and Communications (Japan) in 1985, and his Ph.D. in Electrical Engineering from Hokkaido University (Japan) in 1988. He was a Humboldt researcher at the Institute of Physics, Wuerzburg University (Germany) from 1990 to 1992 and subsequently worked at Purdue University, USA, from 1992 to 1994. Then he served as an associate professor at Hokkaido University, focusing on the interface electron quantum in 1994. Since 1994, he has been working at Shanghai Institute of Technical Physics, Chinese Academy of Sciences. He is currently a full professor at Shanghai Institute of Technical Physics, and the director of its Academic Committee. He is also the director of the Key Laboratory of Infrared Imaging Materials and Devices, Chinese Academy of Sciences. His research chiefly focuses on infrared electro-optical materials and devices.

Dingjiang Yang received his degree in Semiconductor Physics from the University of Jilin(China) in 1984. From 1984 to 2009, he was a faculty member at the North China Research Institute Of Electro-Optics (NCRIEO). After leaving the NCRIEO, he was the chairman of the China Optics and Optoelectronics Manufacturers Association (COEMA) from 2009 to 2015. Since December 2015 he has been the Chairman of Tianjin Lishen Battery Joint-Stock Co. Ltd. His research mainly focuses on InSb and HgCdTe detectors.

Guoqiang Ni is a professor at Beijing Institute of Technology (BIT), Beijing, China. He graduated from Fudan Univ., Shanghai, China and received his bachelor’s degree in Nuclear Physics in 1967. Later, he completed his Master’s and Ph.D. in Optical Engineering at BIT, in 1983 and 1989. Since January 1983 he has been a faculty member of BIT’s Opto-electronics School. His research focuses on Optical Engineering, Photo-electronics Devices/Technologies/Systems, Image Processing, etc.