Noise in Nanoscale Semiconductor Devices

1. Auflage 2020
ISBN: 978-3-030-37502-7
Verlag: Springer International Publishing

Buch, Englisch, 729 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 1095 g

This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices.  Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models.  Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects.

• Describes the state-of-the-art, regarding noise in nanometer semiconductor devices;
• Enables readers to design more reliable semiconductor devices;
• Offers the most up-to-date information on point defects, based on physical microscopic models.

Zielgruppe

Professional/practitioner

Autoren/Hrsg.

Grasser, Tibor

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

TBD

Über Autor(innen)

Prof. Tibor Grasser is an IEEE Fellow and has been the head of the Institute for Microelectronics since 2016. He has edited various books, e.g. on advanced device modeling (World Scientific), the bias temperature instability (Springer) and hot carrier degradation (Springer), is a distinguished lecturer of the IEEE EDS, is a recipient of the Best and Outstanding Paper Awards at IRPS (2008, 2010, 2012, and 2014), IPFA (2013 and 2014), ESREF (2008) and the IEEE EDS Paul Rappaport Award (2011). He currently serves as an Associate Editor for the IEEE Transactions on Electron Devices following his assignment as Associate Editor for Microelectronics Reliability (Elsevier) and has been involved in various outstanding conferences such as IEDM, IRPS, SISPAD, ESSDERC, and IIRW. Prof. Grasser's current research interests include theoretical modeling of performance aspects of 2D and 3D devices (charge trapping, reliability), starting from the ab initio level over more efficient quantum-mechanical descriptions up to TCAD modeling. The models developed in his group have been made available in the most important commercial TCAD environments.