Glawischnig / Ryssel | Ion Implantation Techniques | Buch | 978-3-642-68781-5 | sack.de

Buch, Englisch, Band 10, 374 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 566 g

Reihe: Springer Series in Electronics and Photonics

Glawischnig / Ryssel

Ion Implantation Techniques

Lectures given at the Ion Implantation School in Connection with Fourth International Conference on Ion Implantation: Equipment and Techniques Berchtesgaden, Fed. Rep. of Germany, September 13-15, 1982
Softcover Nachdruck of the original 1. Auflage 1982
ISBN: 978-3-642-68781-5
Verlag: Springer

Lectures given at the Ion Implantation School in Connection with Fourth International Conference on Ion Implantation: Equipment and Techniques Berchtesgaden, Fed. Rep. of Germany, September 13-15, 1982

Buch, Englisch, Band 10, 374 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 566 g

Reihe: Springer Series in Electronics and Photonics

ISBN: 978-3-642-68781-5
Verlag: Springer


In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech­ niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech­ niques, held at Queen's University,' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan­ tation conference for the first time. This implantation school concentra­ ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con­ trast to the first.school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap­ ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec­ tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given.

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Weitere Infos & Material


I Machine Aspects of Ion Implantation.- Ion Implantation System Concepts.- Ion Sources.- Faraday Cup Designs for Ion Implantation.- Safety and Ion Implanters.- II Ion Ranges in Solids.- The Stopping and Range of Ions in Solids.- The Calculation of Ion Ranges in Solids with Analytic Solutions.- Range Distributions.- III Measuring Techniques and Annealing.- Electrical Measuring Techniques.- Wafer Mapping Techniques for Characterization of Ion Implantation Processing.- Non-Electrical Measuring Techniques.- Annealing and Residual Damage.- IV Appendix: Modern Ion Implantation Equipment TM.- Evolution and Performance of the Nova NV-10 Predep™ Implanter.- Ion Implantation Equipment from Veeco.- The Series III A and IIIX Ion Implanters.- Standard High-Voltage Power Supplies for Ion Implantation.- The IONMICROPROBE A-DIDA 3000-30 for Dopant Depth Profiling and Impurity Bulk Analysis.- List of Contributors.



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