Analog IC Reliability in Nanometer CMOS

2013
ISBN: 978-1-4614-6162-3
Verlag: Springer

Buch, Englisch, 198 Seiten, HC gerader Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 4498 g

Reihe: Analog Circuits and Signal Processing

This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed.

The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.

Zielgruppe

Research

Autoren/Hrsg.

Gielen, Georges

Maricau, Elie

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Schaltungsentwurf
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

Introduction.- CMOS Reliability Overview.- Transistor Aging Compact Modeling.- Background on IC Reliability Simulation.- Analog IC Reliability Simulation.- Integrated Circuit Reliability.- Conclusions.