Buch, Englisch, Band 175, 311 Seiten, Format (B × H): 170 mm x 244 mm, Gewicht: 555 g
Reihe: Lecture Notes in Physics
Proceedings of the International School Held in Mátrafüred, Hungary, September 13 - 17, 1982
Buch, Englisch, Band 175, 311 Seiten, Format (B × H): 170 mm x 244 mm, Gewicht: 555 g
Reihe: Lecture Notes in Physics
ISBN: 978-3-540-11986-9
Verlag: Springer Berlin Heidelberg
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A technologist's view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the identification of defect structures.- Electrical and optical measuring techniques for flaw states.- Theory of defect complexes.- Critical comparison of the theoretical models for anomalous large lattice relaxation in III–V compounds.- Vacancy related structure defects in SiO2 — Cyclic cluster calculations compared with experimental results.- A new model for the Si-A center.- Defect complexing in iron-doped silicon.- Photoluminescence of defect complexes in silicon.- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon.- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon.- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c.- On the field dependence of capture and emission processes at deep centres.- Lattice matched heterolayers.- Compositional transition layers in heterostructure.- Defect complexes in III–V compounds.- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs.- Main electron traps in gaas: Aggregates of antisite defects.- Defect reactions in gap caused by zinc diffusion.- Nonstatistical defect surroundings in mixed crystals — the selfactivated luminescence centre in ZnSxSe1-x.- Structure and properties of the Si-SiO2 interregion.- Radiation defects of the semiconductor-insulator interface.- Analysis of Si/SiO2 interface defects by the method of term spectroscopy.- Theoretical aspects of laser annealing.- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP.- Panel discussion.- Mechanical stress induced defect creation in GaP.
