Sensing of Non-Volatile Memory Demystified

Softcover Nachdruck of the original 1. Auflage 2019
ISBN: 978-3-030-07339-8
Verlag: Springer International Publishing

Buch, Englisch, 107 Seiten, Previously published in hardcover, Format (B × H): 155 mm x 235 mm, Gewicht: 201 g

This book introduces readers to the latest advances in sensing technology for a broad range of non-volatile memories (NVMs). Challenges across the memory technologies are highlighted and their solutions in mature technology are discussed, enabling innovation of sensing technologies for future NVMs. Coverage includes sensing techniques ranging from well-established NVMs such as hard disk, flash, Magnetic RAM (MRAM) to emerging NVMs such as ReRAM, STTRAM, FeRAM and Domain Wall Memory will be covered.

Zielgruppe

Research

Autoren/Hrsg.

Ghosh, Swaroop

Fachgebiete

• Mathematik | Informatik EDV | Informatik Technische Informatik Hardware: Grundlagen und Allgemeines
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

Sensing of Spintronic Memories.- Sensing of Resistive RAM.- Sensing Techniques for Ferroelectric based Capacitors and Transistors for Non-Volatile Memory and Logic Applications.- Sensing of Phase Change Memory.- Conclusions. 

Über Autor(innen)

Dr. Ghosh was a senior research and development engineer in Advanced Design, Intel Corp from 2008 to 2012. At Intel, his research was focused on low power and robust embedded memory design in scaled technologies (32nm, 22nm and beyond). He has filed four US patents, published over 35 papers and authored a book chapter. Dr. Ghosh has served in the technical program committees of ISLPED, Nanoarch, VLSI Design, ISQED, ASQED, VLSI-SOC, IEDEC and NDCS.

His research interests include low-power, energy-efficient and robust circuit/system design and digital testing for nanometer technologies. Dr. Ghosh is a senior member of IEEE.