Buch, Englisch, Band 28, 127 Seiten, Format (B × H): 164 mm x 244 mm, Gewicht: 371 g
Buch, Englisch, Band 28, 127 Seiten, Format (B × H): 164 mm x 244 mm, Gewicht: 371 g
Reihe: Springer Series in Advanced Microelectronics
ISBN: 978-90-481-3279-9
Verlag: Springer
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Analog Properties of Multi-Gate MOSFETs.- High-k Related Design Issues.- Multi-Gate Related Design Aspects.- Multi-Gate Tunneling FETs.- Conclusions and Outlook.