Buch, Englisch, 764 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 1177 g
Materials Properties, Crystal Growth, and Devices
Buch, Englisch, 764 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 1177 g
Reihe: Springer Series in Materials Science
ISBN: 978-3-030-37155-5
Verlag: Springer International Publishing
This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community.
Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Verfahrenstechnik | Chemieingenieurwesen | Biotechnologie Technologie der Oberflächenbeschichtung
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Naturwissenschaften Physik Elektromagnetismus Quantenoptik, Nichtlineare Optik, Laserphysik
- Technische Wissenschaften Technik Allgemein Technische Optik, Lasertechnologie
- Naturwissenschaften Physik Thermodynamik Oberflächen- und Grenzflächenphysik, Dünne Schichten
Weitere Infos & Material
Preface.- 1. Introduction (20 pages): General materials properties (polymorphs, bandgap, device application etc) (Roberto Fornari, Univ. of Parma, Italy).- Part I: Bulk growth (40 pages).- 2. Czochralski (CZ) (Zbigniew Galazka, IKZ Berlin, Germany).- 3. Edge-defined film-fed growth (EFG) (Akito Kuramata, Tamura Corp., Japan).- 4. Vertical Bridgman (Keigo Hoshikawa, Shinshu Univ., Japan).- 5. Wafer manufacturing (Akito Kuramata, Tamura Corp., Japan).- Part II: Epitaxial growth (110 pages).- 6. Plasma-assisted MBE (Growth kinetics) (Oliver Bierwagen, Paul Drude Institute Berlin, Germany).- 7. Plasma-assisted MBE (Homoepitaxial and heterostructure growth) (Jim Speck, UCSB, USA).- 8. Ozone MBE (Debdeep Jena, Cornell Univ., USA).- 9 Pulsed laser deposition (PLD) (Akira Ohtomo, Tokyo Institute of Technology, Japan).- 10. Homoepitaxial growth of ß-Ga2O3 thin films on ß-Ga2O3 substrates (Michele Baldini, IKZ Berlin, Germany).- 11. Heteroepitaxial growth of e-Ga2O3 on sapphire substrates (Roberto Fornari, Univ. of Parma, Italy).- 12. Homoepitaxial growth of ß-Ga2O3 thin films on ß-Ga2O3 substrates (Yoshinao Kumagai, Tokyo Univ. of Agriculture and Technology, Japan).- 13. Heteroepitaxial growth of a-Ga2O3 and e-Ga2O3 on sapphire substrates (Yuichi Oshima, NIMS, Japan).- 14. a-Ga2O3 (Shizuo Fujita, Kyoto Univ., Japan).- 15. e-Ga2O3 (Hiroyuki Nishinaka, Kyoto Institute of Technology, Japan).- 16. Low-pressure Chemical Vapor Deposition (Hongping Zhao, Ohio State Univ., USA).- Part III: Materials properties (120 pages).- 17. Theoretical DFB calculation 1 (Chris G. Van de Walle, UCSB, USA).- 18. Theoretical DFB calculation 2 (Joel Varley, Lawrence Livermore National Laboratory, USA).- 19. Optical properties (Takeyoshi Onuma, Kogakuin Univ., Japan).- 20. Phonon properties (Mathias Schubert, Univ. of Nebraska, Lincoln, USA).- 21. Thermal properties (Tengfei Luo,Univ. of Notre Dame and/or Debdeep Jena, Cornell Univ. USA).- 22. Structural properties (TEM, X-ray topography) (Osamu Ueda, Kanazawa Institute of Technology and/or Hirotaka Yamaguchi, AIST, Japan).- 23. Electrical properties (Electron mobility and velocity) (Uttam Singisetti, Univ. at Buffalo, The State Univ. of New York, USA).- 24. Electrical properties (Leakage current of EFG bulk) (Makoto Kasu, Saga Univ., Japan).- 25. Annealing effects on electrical properties (Takayoshi Oshima, Saga Univ., Japan).- 26. Vacancy defects by positron annihilation spectroscopy (Filip Tuomisto, Helsinki University of Technology, Finland).- 27. Deep-level traps (Steve Ringel, Ohio State Univ., USA).- 28. Scintillation properties (Takayuki Yanagida, Nara Institute of Science and Technology, Japan).- Part IV: Devices (110 pages).- 29. Transistors for wireless applications (Gregg Jessen, Air Force Research Lab., USA).- 30. Transistors for power and radiation-hard electronics (Man Hoi Wong, NICT, Japan).- 31. (AlGa)2O3/Ga2O3 HEMT (Siddharth Rajan, Ohio State Univ., USA).- 32. Nano-membrane Ga2O3 FET (Peide Ye, Purdue Univ., USA).- 33, Amorphous Ga2O3 TFT (Junghwan Kim, Tokyo Institute of Technology, Japan).- 34. Vertical Schottky barrier diodes on native substrates (Masataka Higashiwaki, NICT, Japan).- 35. Free-standing a-Ga2O3 Schottky barrier diodes (T. Shinohe, FLOSFIA, Japan).- 36. Schottky and n-Ga2O3/p-oxide semiconductor hetero bipolar diodes (Marius Grundmann, Univ. of Leipzig, Germany).- 37. UV photodiodes (Dong-Sing Wuu, National Chung Hsing Univ., Taiwan).- 38. High-power InGaN LEDs on Ga2O3 substrates (Akito Kuramata, Tamura Corp., Japan).- 40. Image sensor (Keitada Mineo, Japan Broadcasting Corp., Japan).- Index.
