Buch, Englisch, 216 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 321 g
Reihe: MRS Proceedings
Volume 1160
Buch, Englisch, 216 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 321 g
Reihe: MRS Proceedings
ISBN: 978-1-107-40829-6
Verlag: Cambridge University Press
This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.
