Defects in Semiconductors 15

Erscheinungsjahr 1991
ISBN: 978-3-03859-754-4
Verlag: Trans Tech Publications

Sonstiges, Englisch, 1506 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

Materials Science Forum Vols. 38-41

Autoren/Hrsg.

Ferenczi, G.

Inhaltsverzeichnis

Impact of Defects on the Technology of Highly Integrated CircuitsDefects and Future Semiconductor DevicesConfigurations and Properties of Hydrogen in Crystalline SemiconductorsDefect Metastability and BistabilityThe EL2 Defect in GaAsMagneto-Optical and ODMR Investigations on Intrinsic and Extrinsic Defects in GaAsDefects Induced by Reactive Ion Etching (RIE) in GaAs and Correlation with EL2ESR-Spectra of Defects in Plastically Deformed GaAsThe Temperature Dependence of the Hole Ionization Cross Section of EL2 in GaAsMetastable to Stable EL2 Regeneration via an 'Auger' Mechanism Induced by the Debye TailEL2 and the Electronic Structure of the AsGa-ASj Pair in GaAs: The Role of Jahn-Teller Relaxation and Coulomb InteractionThe EL2 Defect and the Isolated Arsenic Antisite Defect in GaAsEL2 - Intracenter Absorption under Hydrostatic PressureInfrared-Induced Paramagnetic Centres in GaAs and Properties of Metastable EL2Anisotropy and Isotropy of Electric Field Effects for the EL2 and E3 Defects in GaAsCorrelation Effects in Native Defects in GaAsA Local Vibration Mode Absorption Study on the Metastability of EL2 Centres in GaAsGeneration Process of EL2 Centers in GaAsCharacterization of EL2 Level in As-Grown GaAs Prepared by MBEInterstitial Defect Reactions in SiliconCarbon-Related Processes in Crystalline SiliconOxygen-Carbon Interactions in Silicon: Photoluminescence Defect Spectrum at 1.06 eV Emission EnergyPeculiarities of Behavior of Irradiated Heat-Treated SiOn the Role of Point Defects in Gettering ProcessesThe Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term AnnealingDeep Levels in Silicon as a Result of CoSi2 Formation Precipitation Phenomena in CMOS TechnologyFormation of SiOX Precipitates in Technological Silicon Wafers during Heating Processes: Investigations with Infrared SpectroscopyInfluence of Defects on the Impurity Diffusion in SIMOX StructuresDefects in High-Dose Oxygen Implanted SiliconConventional and Rapid Thermal Annealing Induced Defects in Czochralski SiliconQuenched-In Defects in Thermally Treated and Pulsed Laser Irradiated SiliconEffects of Boron Doping on the Annealing Characteristics of Cz-SiliconInfluence of Hydrostatic Pressure on Deep Levels in Silicon Induced by AnnealingImpact of Volume Defects on Gold Gettering in Cz-Si WafersParallel Stress and Perpendicular Strain Depth-Distributions in [001] Silicon Amorphized by Ion ImplantationDefects in Amorphous SiliconTheory of 4d Transition-Metal Ions in Silicon: Total-Energies, Diffusion, Electronic and Magnetic PropertiesGreen's-Function Calculation of the Formation Entropy of a Vacancy in SiliconEquilibrium Geometries and Electronic Structure of Oxygen Related Defects in SiliconScreening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality LevelOne- and Two-Oxygen Defects in Silicon - A Theoretical StudyLocalized Resonant State and Its Appearance in Energy Gap in Pressurized GaAsComputation of Hyperfine Interactions for Substitutional Se+and S+ Impurities in SiliconParameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation VolumesDetecting the Dynamic Aspect of the Jahn-Teller Coupling for the V3 Defect in GaAsElectronic Structure of Nitrogen NN-Pairs in GaP from Excitation and Zeeman SpectroscopyLocalized Defect States in Tetrahedrally Bonded SemiconductorsCluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in SiliconComputation of Structure, Stability and Gap States for Core Models of the Oxygen Thermal Donors in SiliconFluorine-Silicon Reactions and the Etching of Crystalline SiliconPhotothermal Ionization SpectroscopyThe Electronic Structure of Platinum, Palladium and Nickel in SiliconTime Resolved Photoluminescence Measurements on Noble Gas Related Defects in SiliconPerturbed Angular Correlation Spectroscopy of In-Li Pairs in SiliconElectronic Characterization of Defects in Iron-Doped P-Type SiliconPhotoluminescence from Defects in Silicon Grown by Molecular Beam EpitaxyElectronic Energy Level of Off-Center Substitutional Nitrogen in SiliconThe Multiconfigurational Carbon-Antimony Pair in SiliconExcitation Spectrum of the Interstitial Iron Donor in Silicon Shift and Splittings of Three Palladium-Related Deep Levels in Silicon under Uniaxial Stresses and the Symmetries of Their Corresponding CentersBistability of Iron-Group III Acceptor Pairs in Silicon3d-4d Transition Metal Complex Formation in SiliconPhotoluminescence from Transition Metals in SiliconVolume Relaxation and Pressure Coefficients of Interstitial 3d-Defects in SiliconPhotoluminescence Study of Nickel Doped SiliconTin Related Defect in Electron Irradiated n-Type Silicon Studied by DLTSElectron Paramagnetic Resonance Studies of Defects in Indium-Doped SiliconInfrared Absorption Studies of the Divacancy in Silicon-New Properties of and Interpretation of the 0.34 eV PeakPhysical Behaviour of 4d Transition Metal Impurity in SiliconLevel Splitting of the Cd-Ground State in SiliconTemperature Dependence of the Capture Cross Section of Seo as Measured by Microwave Absorption Spectroscopy (MAS)Metastable Thermal Donor States in Germanium Identified by Far-IR SpectroscopyA Metastable Precursor to the Di-Carbon Centre in Crystalline SiliconThe Bistability of Thermal Donors in Silicon Investigated by Infrared SpectroscopyPressure Studies of 'Resonant' Metastable Localized Electron State in Heavilly Doped O-GaAsEntropy-Driven Metastable Defects in SiliconChemical Trends in II-VI Semiconductors Doped with 3d ImpuritiesElectrical Properties of Twinned ZnSe: P-Type Conductivity and ChaosDeep Levels due to Transition Metal Impurities in CdTeTime Resolved Spectroscopy of Deeply Cu-Bound Excitons in ZnSPhotoexcitation and Relaxation Mechanism of Electrons in Narrow Gap Semiconductors Doped with Amphoteric Deep ImpuritiesIdentification of Interstitial Copper and Its Pair with Substitutional Copper in GermaniumElectronic Structure of 3d Transition-Atom Impurities in Zinc SelenideStudy on the Compensation Mechanisms of CuInS2Conductivity Control of MOCVD-Grown ZnS Films Doped with I Donor and Na, N AcceptorsColor Centers in Annealing of Neutron-Irradiated Type Ib and Ia DiamondsInfluence of the Cobalt on the Electroluminescence Spectra of ZnOOptical Properties of Defects in Crystals (CdS) Plastically Deformed at 4.2-300 KOxygen in SiliconThermal Donor Formation and Mechanism of Enhanced Oxygen Diffusion in SiliconHeat-Treatment Centres and Thermal Donors in SiliconThe NL 10 Thermal Donor in SiliconEndor Investigations on Heat Treatment Centers in Oxygen Rich SiThermal Donor Formation in Boron Doped SiliconThe Role of Nitrogen in the Formation of Oxygen-Related Thermal Donors in SiliconCalculated Thermodynamic Potentials for the Vacancy and the Oxygen A-Center in SiliconNitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress MeasurementsLocal Phonon Coupling Model for Anharmonic Lattice Excitation in Si: OCorrelations between TD Annihilation and Oxygen Precipitation in Czochralski-Grown SiliconInfluence of Silicide Growth on the Formation Rate of Thermal Donors in SiliconAtomic Geometry and Its Stability of Oxygen Impurities in SiliconFormation of Oxide Precipitates in Cz Grown SiliconNew Thermal Donors and Processes Associated with Oxygen Clustering in Cz-Si at 600? CNovel Thermal Donors Generated in Cz Silicon by Prolonged Annealing at 470? CDefects in Heterostructures and SuperlatticesThe Atomic Structure of GaAs/AlGaAs Interfaces and Its Correlation with the Optical Properties of Quantum WellsPhotoionization of Deep Traps in AlGaAs/GaAs Quantum WellsZinc and Sulphur in Silicon: Experimental Evidence for Kick-Out Diffusion BehaviourDiffusion and Solubility of Platinum in SiliconSelf-Diffusion Mechanisms in Diamond, SiC, Si and GeA New Model of Anomalous Phosphorus Diffusion in SiliconDiffusion and Solubility of Titanium in SiliconDiffusion of Cobalt in SiliconSuperdiffusion of Zn into GaAs in an Array of GaAs/Zn/GaAs during Electron Irradiation at 50?CA Fast Diffusing Species in Silicon Crystals Strain Effects Induced by Gold Diffusion in SiliconDiffusion of Carbon-14 in SiliconDiffusion and Charge State of Hydrogen in SiCharacterization of an Anion Antisite Defect as a Deep Double Donor in InPOptically Detected Magnetic Resonance Studies of Bound Exciton Triplets for Complex Defects in GaPIsotopic Effects in GaAs:NiDeep Levels due to 4d- and 5d-Transition Element Impurties in III-V SemiconductorsDetermination of the FR3 Acceptor Level by Direct Excitation of the FR3 EPR in Undoped Semiinsulating GaAsPositron Annihilation Spectroscopy of the Native Vacancies in As-Grown GaAsMagnetic Circular Dichroism Investigation of the Neutral and the Ionized Manganese Acceptor in GaAsInterpretation of the Electric Field Dependent Thermal Emission Data of Deep TrapsOptically Anisotropic Deep Luminescent Centers in GaAsRaman Spectroscopic Study of Si Local Vibrational Modes in GaAsDeep Donor-Acceptor Pair Recombination in Bulk GaP Studied by ODMR and DLTS TechniquesHigh Resolution Measurements of the 3A2 - 3T2 Absorption Spectrum in V-Doped GaAsGroup-IV Impurity Related Centers in GaAsThe Effect of Deep Electron Traps on Luminescent Properties of VPE Te-Doped GaAs0.62P0.38 Epitaxial LayersSolubility of the Native Deep-Level Defect Typical of LPE-Grown AlGaAsReduction of Capture Barrier Height of Pressure-Induced Deep Donors (DX Center)in GaAs:SiDegeneracy Factor and Pressure Dependence of Si-Induced Deep Impurity States in AlxGa1-xAs from Transport Experiments under Hydrostatic PressureMagneto-Optical Investigations on Intrinsic Acceptors in GaAsPhotoluminescence Uniaxial Stress Study of Fe2+ in InPOptical Absorption and EPR of V4+ in GaPCapture and Recombination Processes in Epitaxial Fe-Doped InPIncorporation of Si into GaAs LatticeShallow Positron Traps in Gallium ArsenideA Novel PGa- Antisite Related Deep Isoelectronic Complex Defect in Gold- And Lithium-Doped GaPPhonon Scattering from V and Ni Centres in GaP and InPNeutral Complex (Au-Li) Defects in GaPThe Relationship of Growth Conditions to Structural Defects of LPE-ALXGa1-XSbField Dependence of Thermal Emission from Oxygen in GaPHall Mobility Reduction due to Electron Scattering by Potential Fluctuation in Si-GaAsPhotoluminescence Study of Fe2+ and Local Atomic Arrangements in In1-XGaXP AlloysDefect Structure in Laser DiodesNonstoichiometry Related Acceptors in GaAsHall Effects, DLTS and Optical Investigations on the Intrinsic 78/203 meV Acceptor in GaAsDislocations and Microdefects in Bridgman GaAsCharge States of Hydrogen in p-Type and n-Type SiliconThe Electronic Structure of Isolated Atomic Hydrogen or Muonium in Si and GaAsElectronic Structure of Hydrogen and Shallow Acceptor Complexes in SiliconHydrogen Diffusion and Passivation of Shallow Impurities in Crystalline SiliconSemiempirical Electronic-Structure Calculations of Bond-Centered Interstitial Hydrogen in SiliconHydrogen Diffusion and Shallow Acceptor Passivation in p-Type InPInfrared Study of the Passivation of Zinc Acceptors by Hydrogen in Indium PhosphideSymmetries of Hydrogen-Associated Centers in SiliconHydrogen Passivation of Impurity-Related Defects in GermaniumOff-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress StudiesDetermination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation DefectsHydrogenation of GaAs during MBE GrowthIdentification of Microdefects Induced in Si after Hydrogen and Helium Plasma TreatmentsIsotope Studies of the Nature of IR-Active Center in c-Si:H(D)Thermal Stability of Acceptor-Hydrogen Pairs in SiliconTheory of Phosphorus-Hydrogen Complexes in Passivated SiliconSpontaneous Hydrogen Injection into SiliconHydrogen Passivation of Donors and Acceptors in InPTwo Electron D-State of DX-CentersThe Deep Donor (DX Center) in GaAs: Determination of the Entropy Term in the Activation EnergyThe Vacancy-Interstitial Model of DX CentersThe Double-Faced DX Center in AlxGa1-xAsLong Lived Resonance States in Si-Doped AlGaAsLuminescence of Tellurium Related Deep Center in GaAs under Hydrostatic PressurePressure Dependence of the DX Center in Al0.35Ga0.65As:TeAlloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole FractionFine Structure, Alloy Broadening and Multi-Peaks in DX Center SpectroscopyCapture Kinetics of the DX Center in GaAlAs:Si under High PressureMetastability of Antisite Defects in GaAs under Negative Electron AffinityPersistent Photoluminescence of DX-Centers in Ga1-xAlxAs:SiApplications of M?ssbauer Spectroscopy to Investigations of Defects in SemiconductorsMagnetic Circular Dichroism Study of Electron-Irradiation Induced Defects in InPThe Fate of Frenkel Pairs in Silicon and Germanium: What Do we Know about it?Positron Annihilation in Electron Irradiated SiliconThe Influence of Germanium on the Formation and Annealing of Radiation Damage in SiliconIR Studies of Electron-Irradiated Aluminium-Doped SiliconThe EPR Study of Inhomogeneous Deformations in Neutron-Irradiated SiliconFormation of Point Defect Clusters by Electron Irradiation in GaP, InAs and InPFormation of Defects in Ion Implanted Silicon during Rapid Isothermal AnnealingElectron-Beam Epitaxy and Superdiffusion in Alloy Semiconductors by Electron-Beam IrradiationPositron Annihilation and Tem Study of Lattice Defects of Fusion Neutron Irradiated SiliconNeutrino-Recoil Experiments in GermaniumOverlapping Deep Levels in Electron-Bombarded N-Type SiliconPAC-Study of Ternary Compound Formation by Ion ImplantationLattice Location of Ion Implanted Dopants in GaAs Using Radioactive ProbesDepth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPRFast Neutron Irradiation Induced Defects in High Purity GermaniumThe Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation DefectsM?ssbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and AlxGa1-xAsDefects in Silicon after Proton and Electron IrradiationNuclear Magnetic Resonance Field Cycling: A New Defect Spectroscopy for III-V SemiconductorsStudies of Electron-Hole Recombination Processes at Deep Levels in GaAs and GaP by Means of Transient Optical Absorption SpectroscopyA Novel Technique for the Investigation of the Interface State Energy Distribution in Schottky Contacts: Evaluation from the I-V CharacteristicsTransient Microwave Absorption Spectroscopy - Experimental VerificationStudy on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission MicroscopyPhotoluminescence and Optical Beam Induced Current Imaging of DefectsInvestigation of Stacking Faults in Silicon by Induced Current MethodsCharacterization of Deep Defects in Semi-Insulating GaAs by Capacitance and Conductance DLTS with Electrical and Optical ExcitationsDefect Alalysis in Semiconductors by DechannelingStudy of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray TopographyTemperature Dependence of Absorption Coefficient in Silicon of Lower PurityDevelopement of a Scanning Minority Carrier Transient Spectroscopy Method: Application to the Study of Gold Diffusion in a Silicon BicrystalDefect Analysis in SiO2/Si Structures by Electron TunnelingDefect and Impurity Studies in III-V Quantum Wells Using Fourier Transform Photoluminescence SpectroscopyCrystal Defect Study in III-V Compound TechnologyMultiphonon Recombination in SemiconductorsTwo-Electron Capture in Semiconductors with Deep DefectsInfluence of Dislocations on Galvanomagnetic and Optical Properties of GaAsMetastability of Electrical Properties of Dislocations in SiliconOn the Nature of the Impurity Atmosphere around Dislocations in Bulk n-Type GaAsEffect of Impurities on Dislocation Activity in GaAsMagneto-Optics of Excitons Bound to Dislocations in CdSDeep Level Studies in GaAs-Ga0.5Al0.5As Superlattices Grown by MOCVDManganese Levels in GaAs under Hydrostatic Pressure, in AlGaAs, and in GaAs/AlGaAs Quantum Wells - A Comparative StudyProcess Dependent Interface States of Ag/(110)GaAs Schottky DiodesScreening Effects and Density of States of Shallow Impurities in GaAs-(Ga,Al)As Quantum-Well WiresTransient Spectroscopy on Individual Defect LevelsPressure Dependence of Schottky Barrier Height at Pt/GaAs InterfacePhotoluminescence and Transmision Electron Microscopy of Defects in SiC Grown on SiDeep Levels in GaAs MesfetsDefects in MOS TechnologiesLattice Deformation and Defect Structure of GaAs/Native Oxide InterfacesInfluence of the Surface Layer Defects on the Conduction Mechanism in Semi-Insulating Gallium ArsenideInvestigation of Trapping Properities in Simox Films by Photo-Induced Current Transient SpectroscopyCoherent Potential Approximation Calcutations of the Electronic Structure of Amorphous SiliconInfluence of the Field Induced Doping Effect on the Density of States in Highly Doped N-Type a-Si:HInfluence of the Defect Density of Amorphous Silicon at the Substrate Interface on the Schottky Barrier CharacteristicsMicroinhomogeneities Characterized by Photocurrent Measurements and the Sem-Ebic Technique in Alpha-Si:H Layers