Buch, Englisch, Band 73, 452 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 1850 g
Devices and Applications
Buch, Englisch, Band 73, 452 Seiten, Format (B × H): 155 mm x 235 mm, Gewicht: 1850 g
Reihe: Springer Series in Materials Science
ISBN: 978-3-540-20666-8
Verlag: Springer
In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Naturwissenschaften Physik Elektromagnetismus Magnetismus
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Verfahrenstechnik | Chemieingenieurwesen | Biotechnologie Technologie der Oberflächenbeschichtung
- Naturwissenschaften Physik Thermodynamik Oberflächen- und Grenzflächenphysik, Dünne Schichten
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
- Technische Wissenschaften Technik Allgemein Physik, Chemie für Ingenieure
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
Weitere Infos & Material
1 Materials Science and Engineering of Bulk Silicon Carbides.- 2 Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibrations.- 3 Sublimation Growth of SiC Single Crystals.- 4 Crystal Growth of Silicon Carbide: Evaluation and Modeling.- 5 Lattice Dynamics of Defects and Thermal Properties of 3C-SiC.- 6 Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition.- 7 Electron Paramagnetic Resonance Characterization of SiC.- 8 Material Selection and Interfacial Reaction in Ohmic-Contact Formation on SiC.- 9 Oxidation, MOS Capacitors, and MOSFETs.- 10 4H-SiC Power-Switching Devices for Extreme-Environment Applications.- 11 SiC Nuclear-Radiation Detectors.
