Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures

2009
ISBN: 978-3-540-79364-9
Verlag: Springer Berlin Heidelberg

Buch, Englisch, Band 115, 261 Seiten, Format (B × H): 160 mm x 241 mm, Gewicht: 633 g

Reihe: Topics in Applied Physics

The spin degree-of-freedom is o?ering a wide range of intriguing oppor- nities both in fundamental as well as in applied solid-state physics. When combined with the rich and fertile physics of low-dimensional semicondu- ingstructuresandwiththepossibilitytochange,forexample,carrierdensity, electric ?elds or coupling to other quantum systems in a controlled way, an extremely exciting and interesting research ?eld is opened. Most comm- cial electronic devices are based on spin-independent charge transport. In the last two decades, however, scientists have been focusing on the ambitious objective of exploiting the spin degree-of-freedom of the electron to achieve novel functionalities. Ferromagnetic semiconductors, spin transistors, sing- spin manipulations or spin-torque MRAMs (magnetoresistive random access memories) are some of the hot topics. The importance of spin phenomena for new applications was recognized by the Royal Swedish Academy of S- ences by awarding the 2007 Nobel Prize in Physics jointly to Albert Fert and Peter Grun ¨ berg “for the discovery of giant magnetoresistance”. This - fect originates from spin-dependent scattering phenomena in a two-terminal ferromagnetic–paramagnetic–ferromagnetic junction leading to a new type of magnetic memory. The Hall e?ect and its applications remain fertile - search areas. The spin Hall e?ect, in analogy with the conventional Hall e?ect, occurs in paramagnetic systems as a result of spin-orbit interaction.

Zielgruppe

Research

Autoren/Hrsg.

Fanciulli, Marco

Fachgebiete

• Naturwissenschaften Physik Quantenphysik
• Technische Wissenschaften Technik Allgemein Nanotechnologie
• Naturwissenschaften Physik Thermodynamik Oberflächen- und Grenzflächenphysik, Dünne Schichten

Inhaltsverzeichnis

Resistively Detected ESR and ENDOR Experiments in Narrow and Wide Quantum Wells: A Comparative Study.- Electron-Spin Manipulation in Quantum Dot Systems.- Resistively Detected NMR in GaAs/AlGaAs.- Electron-Spin Dynamics in Self-Assembled (In,Ga)As/GaAs Quantum Dots.- Single-Electron-Spin Measurements in Si-Based Semiconductor Nanostructures.- Si/SiGe Quantum Devices, Quantum Wells, and Electron-Spin Coherence.- Electrical Detection of Electron-Spin Resonance in Two-Dimensional Systems.- Quantitative Treatment of Decoherence.- Measuring the Charge and Spin States of Electrons on Individual Dopant Atoms in Silicon.- Electron Spin as a Spectrometer of Nuclear-Spin Noise and Other Fluctuations.- A Robust and Fast Method to Compute Shallow States without Adjustable Parameters: Simulations for a Silicon-Based Qubit.- Photon-Assisted Tunneling in Quantum Dots.

Über Autor(innen)

Marco Fanciulli is the Director of the CNR-INFM MDM (Materials and Devices for Microelectronics) National Laboratory and Full Professor at the Department of Material Science at the University of Milano Bicocca.