Erol Dilute III-V Nitride Semiconductors and Material Systems

Physics and Technology
2008
ISBN: 978-3-540-74529-7
Verlag: Springer
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band 105, 592 Seiten, eBook

Reihe: Springer Series in Materials Science

This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.

Zielgruppe

Research

Autoren/Hrsg.

Erol, Ay?e

Erol, Ayse

Inhaltsverzeichnis

Energetic Beam Synthesis of Dilute Nitrides and Related Alloys.- Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells.- Electronic Band Structure of Highly Mismatched Semiconductor Alloys.- Electronic Structure of GaNxAs1?x Under Pressure.- Experimental Studies of GaInNAs Conduction Band Structure.- Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues.- The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides.- Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells.- Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III–As–N Alloys.- The Hall Mobility in Dilute Nitrides.- Spin Dynamics in Dilute Nitride.- Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs.- Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates.- Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP.- Doping, Electrical Properties and Solar Cell Application of GaInNAs.- Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/III–V-N Alloy Layers Grown on Si Substrate.- Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers.- Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition.- Interdiffused GaInNAsSb Quantum Well on GaAs for 1,300–1,550 nm Diode Lasers.- Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides.- Dilute Nitride Photodetector and Modulator Devices.

Über Autor(innen)

Ayse Erol obtained her Ph.D. degree in 2002 from the Physics Department of the Istanbul University in Turkey. During her PhD studies, she joined to Prof. Naci Balkan’s group for researches on Dilute Nitride Semiconductors as a Research Fellow in 2001. From 1998 to 2004 she was employed as Research Assistant at Istanbul University and in 2004 she promoted to Assistant Professor Position. Main research areas include semiconductor optoelectronics, vertical cavity surface emitting lasers, and optical characterization of low dimensional semiconductor devices such as GaAs/GaAlAs and GaInNAs/GaAs quantum wells. She has published several research papers and she is co-author a popular science book and co-editor of a conference proceeding journal. She is currently an Assistant Professor in Solid State Division, Physics Department, at the Istanbul University and continues her researches at Nano- and Optoelectronics Materials and Devices Research Laboratory.