RF Semiconductor Devices

1. Auflage 2021
ISBN: 978-1-4614-4246-2
Verlag: Springer-Verlag New York Inc.

Buch, Englisch, 300 Seiten, Format (B × H): 210 mm x 235 mm

This book covers the RF domain from the very basics to the more complicated, from the device level to the integrated circuits level. The discussion takes the reader from the beginning of conceiving an optimized silicon wafer for RF applications, through the RF oriented device conception and the in-depth RF device characterization, in order to achieve a fully optimized, RF integrated circuit. Throughout this cycle, performance optimization is addressed from various perspectives, including high temperature (an unavoidable side effect in today’s devices), low power consumption (required in all portable applications), noise, nonlinearities, crosstalk, etc.

Zielgruppe

Professional/practitioner

Autoren/Hrsg.

Emam, Mostafa

Roda Neve, Cesar

Roda Neve, César

Raskin, Jean-Pierre

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise

Inhaltsverzeichnis

High frequency behavior of semiconductor devices.- Wideband characterization methodology: Hands-on.- A wide variety of MOSFET Technologies.- Integration of RF Passive Elements.- Towards a Successful RF Circuit Design.