Eberl / Petroff / Demeester | Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates | E-Book | sack.de
E-Book

E-Book, Englisch, Band 298, 386 Seiten, eBook

Reihe: NATO Science Series E

Eberl / Petroff / Demeester Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates


Erscheinungsjahr 2012
ISBN: 978-94-011-0341-1
Verlag: Springer Netherland
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band 298, 386 Seiten, eBook

Reihe: NATO Science Series E

ISBN: 978-94-011-0341-1
Verlag: Springer Netherland
Format: PDF
Kopierschutz: 1 - PDF Watermark



Eberl / Petroff / Demeester Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates jetzt bestellen!

Zielgruppe


Research

Weitere Infos & Material


Theoretical Aspects of Epitaxial Growth.- Submonolayer template formation for epitaxial processes.- Role of stress in the self-assembly of nanostructures.- Self Assembling Nanostructures / Cluster Formation.- Semiconductor nanostructures: Nature’s way.- Nucleation and growth of InAs islands on GaAs: An optical study.- Growth and properties of self assembling quantum dots in III/V compound semiconductors.- Self-assembling InP/In0.48Ga0.52P quantum dots grown by MBE.- Group III–V and group IV quantum dot synthesis.- Growth on Tilted and Non-(001) Surfaces.- Epitaxy on high-index surfaces: A key to self-organizing quantum wires and dots.- Binding of electrons and holes at quantum wires formed by T-intersecting quantum wells.- Between one and two dimensions: Quantum wires arrays grown on vicinal surfaces.- The characterization of the growth of sub-monolayer coverages of Si and Be on GaAs (001)-c(4×4) & (2×4)-? by reflectance anisotropy spectroscopy and RHEED.- Laterally ordered incorporation of impurity atoms on vicinal GaAs (001) surfaces.- The role of exchange reactions and strain in the heteroepitaxy on vicinal GaAs surfaces.- Nanostructure Growth on Patterned Silicon Substrates.- Formation and properties of SiGe/Si quantum wire structures.- Self-assembling growth of silicon nanostructures with micro shadow masks.- Radiative recombination in SiGe/Si dots and wires selectively grown by LPCVD.- Evolution of Si surface nanostructure under growth conditions.- Nanostructures Prepared by Selective Epitaxy or Regrowth on Patterned Substrates.- Fabrication of quantum wires and dots and nanostructure characterization.- The chemistry and growth of MOVPE-based selective epitaxy.- Photoassisted selective area growth of III–V compounds.- Concepts for lateral III–Vheterostructures fabricated by surface selective growth in MOMBE.- Molecular processes for surface selective growth on patterned substrates; an investigation of CBE AlAs deposition.- Basic growth studies and applications of quantum structures grown on submicron gratings.- Pyramidal quantum dot structures fabricated using selective area MOCVD.- Selective epitaxy for ridge and edge quantum wire structures: Morphology and purity issues.- Simulation of molecular beam epitaxial growth over nonplanar surfaces.- Seeded self-ordering of low-dimensional quantum structures by nonplanar epitaxy.- Structural investigations of the direct growth of AlGaAs/GaAs quantum wire structures by MOVPE.- Growth induced and patterned 0-dimensional quantum structures.- In-Situ Processing and Device Applications Based on Epitaxial Regrowth.- Growth of low dimensional structures for optical application.- Operation of strained multi-quantum wire lasers.- MBE-regrowth for monolithic integration of GaAs-based field-effect transistors and Schottky diodes.- Chemical beam etching and epitaxy with atomic scale control and instant switching between etching and epitaxy.- In-Situ etching and MBE regrowth for templated sidewall quantum wires.



Ihre Fragen, Wünsche oder Anmerkungen
Vorname*
Nachname*
Ihre E-Mail-Adresse*
Kundennr.
Ihre Nachricht*
Lediglich mit * gekennzeichnete Felder sind Pflichtfelder.
Wenn Sie die im Kontaktformular eingegebenen Daten durch Klick auf den nachfolgenden Button übersenden, erklären Sie sich damit einverstanden, dass wir Ihr Angaben für die Beantwortung Ihrer Anfrage verwenden. Selbstverständlich werden Ihre Daten vertraulich behandelt und nicht an Dritte weitergegeben. Sie können der Verwendung Ihrer Daten jederzeit widersprechen. Das Datenhandling bei Sack Fachmedien erklären wir Ihnen in unserer Datenschutzerklärung.