Modern Semiconductor Physics and Device Applications

1. Auflage 2023
ISBN: 978-0-367-25080-5
Verlag: CRC Press

Buch, Englisch, 397 Seiten, Format (B × H): 178 mm x 254 mm, Gewicht: 750 g

This textbook provides a theoretical background for contemporary trends in solid-state theory and semiconductor device physics. It discusses advanced methods of quantum mechanics and field theory and is therefore primarily intended for graduate students in theoretical and experimental physics who have already studied electrodynamics, statistical physics, and quantum mechanics. It also relates solid-state physics fundamentals to semiconductor device applications and includes auxiliary results from mathematics and quantum mechanics, making the book useful also for graduate students in electrical engineering and material science.

Key Features:

- Explores concepts common in textbooks on semiconductors, in addition to topics not included in similar books currently available on the market, such as the topology of Hilbert space in crystals

- Contains the latest research and developments in the field

- Written in an accessible yet rigorous manner

Autoren/Hrsg.

Dugaev, Vitalii

Litvinov, Vladimir

Fachgebiete

• Naturwissenschaften Physik Physik Allgemein Theoretische Physik, Mathematische Physik, Computerphysik
• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Naturwissenschaften Physik Quantenphysik

Inhaltsverzeichnis

1. Quantum electron states and energy bands. 2. Electron confindement in semiconductors. 3. Impurities and disorder in semiconductors. 4. Statistics of electrons in semiconductors. 5. Electrons in a magnetic field. 6. Phonons and electron-phonon interaction. 7. Transport properties. 8. Impurity band conductivity. 9. Spin-resolved transport in semiconductors. 10. Electron scattering. 11. Magnetic semiconductors. 12. Optical properties. 13. Nonequilibrium electrons and holes. 14. Schottky diodes and P-n junctions. 15. Field-Effect Transistors. 16. Semiconductor lasers. 17 Semiconductor photodetectors. 18 Device applications of novel 2D materials

Über Autor(innen)

Vitalii K. Dugaev is a professor at the Department of Physics and Medical Engineering in Rzeszow University of Technology, Poland and has been since 2006. He earned his MS in electrical engineering at Lviv Technical University, Ukraine, PhD, and Doctor of Science in physics in Chernivtsi University, Ukraine. He worked as a research fellow for nearly 30 years in the Institute of Materials Science, National Academy of Sciences of Ukraine; Technical University of Lisbon, Portugal; Max Planck Institute for Microstructure Physics, Germany; and Néel Institute, France; and also spent one year as a visiting scientist at the Landau Institute for Theoretical Physics, Russia. He has taught Physics I and II and Solid-State Physics at both undergraduate and graduate levels. His main scientific interests are mostly related to the electronic structure of semiconductors and low-dimensional structures, in addition to the transport properties of semiconductors and spin-resolved transport.

Vladimir I. Litvinov is a principal scientist at the Sierra Nevada Corporation, Irvine, California, and has been since 1999. He earned his PhD and Doctor of Science in physics from Chernivtsi National University, Ukraine and Institute of Physics Estonian Academy of Sciences (now the Institute of Physics, University of Tartu, Estonia), respectively. From 1978–1995, he was a member and subsequently the head of the theoretical lab at the Institute of Material Science, National Academy of Science of Ukraine. From 1996–1999, he was a senior research associate at the Center of Quantum Devices at Northwestern University, Evanston, Illinois. His research interests include solid-state and semiconductor physics, semiconductor spintronics, topological insulators, optoelectronic devices, and millimeter-wave scanning antennas.