Dimoulas / Gusev / McIntyre Advanced Gate Stacks for High-Mobility Semiconductors

1. Auflage 2008
ISBN: 978-3-540-71491-0
Verlag: Springer Berlin Heidelberg
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band 27, 384 Seiten

Reihe: Springer Series in Advanced Microelectronics

This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Dr. Dimoulas obtained his Ph.D in Applied Physics from the University of Crete and the Foundation for Research &Technology-Hellas (FORTH), Greece in 1991 for his research on heteroepitaxial strain of III-V semiconductors grown on Si by MBE. He worked in the Microelectronics Research Group of FORTH until 1992. He was Human Capital & Mobility Fellow of the EU at the University of Groningen, Holland until 1994, a Research Fellow at the California Institute of Technology (CALTECH), Chemical Engineering, Pasadena USA until1996 and member of the Faculty at the University of Maryland at College Park (UMCP) USA, until February 1999. In addition, he has been visiting research scientist at NRL, Washington DC in 1992 and at IBM Zurich Research Laboratory, Switzerland in 2006. Since 1999, he is research director and head of the MBE laboratory at the Institute of Materials Science of the National Center for Scientific Research DEMOKRITOS, Athens, Greece. He is leading several European-funded projects in the areas of advanced microelectronic materials and devices. He has co-author more than 80 publications in international journals, archives and proceedings, and has also written book chapters. He has given 15 invited presentations during the last five years. He has been involved in the organization of several conferences and workshops either as the main organizer or as a member of advisory and program committees. Finally, he is reviewer in recognized International Journals and evaluator of research and development projects. His expertise includes MBE growth of Semiconductor and dielectric materials (high-k oxides), nanodevice processing by e-beam lithography and materials characterization and device electrical testing. His current interests focus on advanced high-k gate stacks for Ge and III-V MOS technology Dr. Evgeni Gusev received his MS (Applied Physics/Molecular Physics) and PhD (Solid State Physics) from Moscow Engineering Physics Institute - Technical University in 1988 and 1991.  In 1993, he joined Laboratory for Surface Modifications at Rutgers University, first as a PostDoctoral Fellow and then as a Research Assistant Professor, where he established a program on fundamental aspects of gate dielectrics.  In 1997, following the invitation by Prof. Masataka Hirose, he held an appointment of Visiting Professor in the Center for Nanodevices and Systems in Hiroshima University, Japan.  Shortly after that he moved to IBM, where he was responsible for several projects on gate stack processing, characterization, and FEOL device integration (starting from 0.25um CMOS to 32 nm devices more recently) in both IBM Semiconductor Research and Development Center (SRDC) in East Fishkill (NY) and IBM T.J. Watson Research Center in Yorktown Heights (NY). In July 2005, he joined QUALCOMM MEMS Technology Development Center in San Jose as the Director of Research and Development.  Since 2004, he is also a Distinguished Visiting Professor at Rutgers University. Dr. Gusev has contributed to the technical R&D community with 10 edited books, more than 150 publications and 20 issued and filed patents on various aspects of semiconductor devices and technology.  He is a member of several international professional committees, panels and societies. Professor Paul McIntyre is Associate Professor of Materials Science and Engineering and Deputy Director of the Geballe Laboratory for Advanced Materials at Stanford University. McIntyre leads a research team of fourteen graduate students, three visiting scientists, and two consulting professors who perform basic research on nanostructured inorganic materials for applications in electronics, energy technologies and sensors. He is best known for his work on metal oxide/semiconductor interfaces, ultrathin high-k dielectrics, defects in complex metal oxide thin films, and nanostructured Si-Ge single crystals. His research team synthesizes materials, characterizes their structures and compositions with a variety of advanced microscopies and spectroscopies, studies the passivation of their interfaces, and measures functional properties of devices. Their research is supported by several U.S. government agencies and major semiconductor manufacturers world-wide. McIntyre is an author of approximately 100 archival journal papers and inventor of 5 US patents, and has given over 60 invited presentations, plenary talks and tutorial lectures. He has received an IBM Faculty Award and Charles Lee Powell Foundation Faculty Scholarship in recognition of his group's research. Prior to joining Stanford, McIntyre was a member of the technical staff in the Central Research Laboratories at Texas Instruments and he also served as Lab Director's Fund Postdoctoral Fellow in the Materials Division at Los Alamos National Laboratory. He earned the Sc.D. from the Materials Science and Engineering department at MIT and the B.A.Sc. from the Materials Engineering department at the University of British Columbia (Canada). McIntyre is a technical advisor to Unity Semiconductor Corporation, and has been an invited member of government and industry panels studying future research needs in ceramic materials, metal oxide/semiconductor structures, nano-scale ferroelectrics and nano-electronics. Professor Dr. Marc Heyns was born in Turnhout, Belgium, on November 16, 1956. He received the M.S. degree in Applied Sciences (Electronics) in 1979 from the Katholieke Universiteit Leuven, Belgium. In 1986 he received the Ph.D. degree, also from the Katholieke Universiteit Leuven, Belgium, with a thesis entitled: 'Study of the charge trapping and degradation of thermally grown SiO2 layers'. From 1979 to 1985 he held a fellowship from the National Fund for Scientific Research (NFWO) in the Laboratory for Physics and Electronics of Semiconductors of the K.U. Leuven. In January 1986 he joined IMEC where he became Department Director and Program Director responsible for a research group working on ultra-clean processing technology, advanced high-k gate stacks, metal gates, epitaxial deposition of materials, environmentally benign processing and novel high-mobility substrate materials. He became an IMEC-Fellow in 2001 and a Professor at the Katholieke Universiteit Leuven in 2005. He has authored or co-authored more than 150 contributions in scientific journals and more than 500 papers at international conferences. His current research topics include novel high-k dielectric materials, advanced cleaning and surface preparation technology, epitaxy, novel devices made on high-mobility substrates such Ge and III/V compounds, nanowires and carbon nanotubes.

Autoren/Hrsg.

Dimoulas, Athanasios

Gusev, Evgeni

Heyns, Marc

McIntyre, Paul C.

Inhaltsverzeichnis

1;Preface;6
2;Contents;9
3;Contributors;17
4;1 Strained-Si CMOS Technology;23
4.1;1.1 Introduction;23
4.2;1.2 Impact of Mobility Enhancement on Current Drive of Short- Channel MOSFETs;24
4.3;1.3 Physical Mechanism of Mobility Enhancement in Strained- Si n- and p- Channel MOSFETs;25
4.4;1.4 Implementation of Strain into MOSFETs;33
4.5;1.5 Conclusions;36
4.6;Acknowledgements;37
4.7;References;37
5;2 High Current Drivability MOSFET Fabricated on Si( 110) Surface;42
5.1;2.1 Introduction;42
5.2;2.2 Experimental;43
5.3;2.3 Results and Discussions;45
5.4;2.4 Conclusions;59
5.5;Acknowledgements;60
5.6;References;60
6;3 Advanced High-Mobility Semiconductor- on- Insulator Materials;63
6.1;3.1 Introduction;63
6.2;3.2 Crystalline Orientation Effects;64
6.3;3.3 Strained Si on Insulator Wafers;68
6.4;3.4 Germanium On Insulator Substrates;80
6.5;3.5 Long Term Perspectives;85
6.6;3.6 Conclusions;86
6.7;Acknowledgments;86
6.8;References;87
7;4 Passivation and Characterization of Germanium Surfaces;93
7.1;4.1 Introduction;93
7.2;4.2 Experimental Methodology;94
7.3;4.3 Clean Ge Surfaces;96
7.4;4.4 Oxidation of Ge Surfaces;96
7.5;4.5 Hydrogenation of Germanium Surfaces;103
7.6;4.6 Nitridation and Oxynitridation of Germanium Surfaces;113
7.7;4.7 Sulfur Passivation of Germanium Surfaces;117
7.8;4.8 Chlorine Passivation of Germanium Surfaces;119
7.9;4.9 Organic Molecules as Passivating Agent of Germanium Surfaces;121
7.10;4.10 Conclusions;124
7.11;Acknowlegment;131
7.12;References;131
8;5 Interface Engineering for High- k Ge MOSFETs;134
8.1;5.1 Introduction;134
8.2;5.2 Germanium Oxide and High-k/Ge Interface;135
8.3;5.3 Surface Nitridation;141
8.4;5.4 Surface Silicon Passivation;147
8.5;5.5 Plasma- PH3 and AlN Surface Passivation;154
8.6;5.6 Conclusion;156
8.7;References;156
9;6 Effect of Surface Nitridation on the Electrical Characteristics of Germanium High- k/ Metal Gate Metal- Oxide- Semiconductor Devices;158
9.1;6.1 Introduction;158
9.2;6.2 Germanium Surface Cleaning;160
9.3;6.3 Surface Pretreatment with NH3 ( Surface Nitridation);163
9.4;6.4 Effect of Surface Nitridation on the Electrical Characteristics of Germanium MOS Capacitors;166
9.5;6.5 Conclusions;178
9.6;Acknowledgments;179
9.7;References;179
10;7 Modeling of Growth of High- k Oxides on Semiconductors;184
10.1;7.1 Introduction;184
10.2;7.2 Computational Approach;185
10.3;7.3 The Chemistry of the Substrate;186
10.4;7.4 Metal Adsorption on Si(001);187
10.5;7.5 Interface of SrTiO3 and Si( 001);193
10.6;7.6 Band Offset Engineering;194
10.7;7.7 Conclusions;197
10.8;Acknowledgments;197
10.9;References;197
11;8 Physical, Chemical, and Electrical Characterization of High-k Dielectrics on Ge and GaAs;199
11.1;8.1 Introduction;199
11.2;8.2 Experimental Methodology: ALD Deposition and Characterization Techniques;201
11.3;8.3 Structural and Chemical Properties;204
11.4;8.4 Electrical Properties of High-k Dielectrics on Ge and GaAs;212
11.5;8.5 Band Offset of High-k Dielectrics Deposited on Ge and GaAs;216
11.6;8.6 Conclusions;219
11.7;Acknowledgments;220
11.8;References;220
12;9 Point Defects in Stacks of High-k Metal Oxides on Ge: Contrast with the Si Case;228
12.1;9.1 Introduction;228
12.2;9.2 Experimental Methodology and Samples;233
12.3;9.3 Experimental Results;234
12.4;9.4 Discussion;240
12.5;9.5 Conclusions;242
12.6;Acknowledgments;243
12.7;References;243
13;10 High k Gate Dielectrics for Compound Semiconductors;246
13.1;10.1 Introduction;246
13.2;10.2 High k Gate Dielectrics for GaAs and its Related Compounds: Ga2O3( Gd2O3) Approach;249
13.3;10.3 Thermodynamic Stability of Ga2O3(Gd2O3)/ GaAs Interface at High Temperatures [ 26];253
13.4;10.4 Single Crystal Gd2O3 on GaAs and Interfaces;256
13.5;10.5 GaAs MOSFETs;259
13.6;10.6 High k Gate Dielectrics for GaAs and its Related Compounds: ALD Al2O3 Approach and its Mechanism of Unpinning the Fermi Level [ 31];263
13.7;10.7 GaN Passivation;267
13.8;10.8 Conclusion;270
13.9;Acknowledgments;270
13.10;References;271
14;11 Interface Properties of High- k Dielectrics on Germanium;274
14.1;11.1 Introduction;274
14.2;11.2 Experimental;275
14.3;11.3 Results and Discussion;276
14.4;11.4 Conclusion;283
14.5;Acknowledgments;284
14.6;References;284
15;12 A Theoretical View on the Dielectric Properties of Crystalline and Amorphous High-k Materials and Films;285
15.1;12.1 Introduction;285
15.2;12.2 A Crystal Selection: Dioxides, Sesquioxides, Aluminates;289
15.3;12.3 Amorphous and Alloyed Systems: Silica, Aluminates, Silicates;296
15.4;12.4 Local Microscopic Screening in Ultrathin Films;303
15.5;12.5 Conclusions;305
15.6;References;306
16;13 Germanium Nanodevices and Technology;309
16.1;13.1 Introduction;309
16.2;13.2 Challenges to Scaling Conventional CMOS;309
16.3;13.3 Why High Mobility Channel?;311
16.4;13.4 Which High Mobility Channel Material?;311
16.5;13.5 Heteroepitaxial Ge Growth on Si;313
16.6;13.6 Nanoscale Gate Stacks on Germanium;316
16.7;13.7 Shallow Source–Drain Junctions;319
16.8;13.8 Metal-Gated Germanium MOSFET Processes;322
16.9;13.9 Conclusions;326
16.10;Acknowledgments;327
16.11;References;327
17;14 Opportunities and Challenges of Germanium Channel MOSFETs;330
17.1;14.1 Introduction;330
17.2;14.2 Ge Surface Channel MOSFETs;331
17.3;14.3 Strained Ge Buried Channel MOSFETs;334
17.4;14.4 Conclusions;344
17.5;Acknowledgements;345
17.6;References;345
18;15 Germanium Deep-Submicron p-FET and n- FET Devices, Fabricated on Germanium- On- Insulator Substrates;348
18.1;15.1 Introduction;348
18.2;15.2 Ge Gate Stack Capacitor;349
18.3;15.3 Dopant Activation in Germanium;351
18.4;15.4 GeOI Substrates;352
18.5;15.5 Conclusions;353
18.6;Acknowledgements;353
18.7;References;354
19;16 Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics;356
19.1;16.1 Introduction;356
19.2;16.2 Materials Structure and Composition;358
19.3;16.3 Electrical Characterization of ALD Al2O3 on GaAs;361
19.4;16.4 GaAs MOSFET Fabrication and Characterization;364
19.5;16.5 InGaAs MOSFET Fabrication and Characterization;367
19.6;16.6 GaN MOS-HEMT Fabrication and Characterization;368
19.7;16.7 Conclusions;371
19.8;Acknowledgments;372
19.9;References;373
20;17 Fabrication of MBE High-k MOSFETs in a Standard CMOS Flow;377
20.1;17.1 Introduction;377
20.2;17.2 Device Fabrication;378
20.3;17.3 Device Characterization;379
20.4;17.4 Conclusions;386
20.5;Acknowledgments;387
20.6;References;388
21;Index;389