Buch, Englisch, 586 Seiten, Format (B × H): 160 mm x 236 mm, Gewicht: 953 g
Reihe: MRS Proceedings
Buch, Englisch, 586 Seiten, Format (B × H): 160 mm x 236 mm, Gewicht: 953 g
Reihe: MRS Proceedings
ISBN: 978-1-55899-418-8
Verlag: Cambridge University Press
Wide-bandgap semiconductors have a long and illustrious history, starting with the first paper on SiC light-emitting diodes published in 1907. Since then, interest in wide-bandgap semiconductors has skyrocketed. Improved material quality, important breakthroughs both in SiC and GaN technologies, and the emergence of blue GaN-based lasers, have stimulated this progress. To provide a fairly complete picture of this important field, most of the work presented at the conference is included in the volume. In addition, invited papers present an excellent overview of the current state of the art and offer projections for future developments. Topics include: GaN materials and devices; crystal growth; SiC materials and devices; characterization of wide-bandgap semiconductors; and processing characterization and properties of wide-bandgap materials.
