Shallow Impurities in Semiconductors IV

Erscheinungsjahr 1991
ISBN: 978-3-03859-772-8
Verlag: Trans Tech Publications

Sonstiges, Englisch, 502 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g

I. TECHNIQUES. II. d DOPING. III. QUANTUM WELLS. IV. HYDROGEN IN SEMICONDUCTORS. V. BOUND EXCITONS. VI. IMPURITIES IN SILICON. VII. IMPURITIES IN Ge AND GexSi1-x. VIII. IMPURITIES IN COMPOUND SEMICONDUCTORS. IX. DX CENTRES.

Autoren/Hrsg.

Davies, Gordon

Inhaltsverzeichnis

Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar (d) Doped III-V SemiconductorsDetermination of Residual Donor Concentration by Selective Pair Luminescence in Semi-Insulating GaAsDynamics of Selectively Excited Donor Acceptor Pairs in GaAsA New Technology of Boron Diffusion into Silicon by Rapid Thermal ProcessingControl of Shallow Boron Profile in SiliconPhotoionization Cross-Section Spectra of Shallow Acceptors in Semiconductors: Effect of a Change in Heavy - to Light-Hole Mass RatioElectron-Hole Mechanism of Migration and Defect InteractionDelta-Doping in III-V SemiconductorsOptical Interband Transitions in Single and Periodically Delta-Doped GaAs SamplesPhotoluminescence and Excitation Study of Delta Doped GaAsShallow Impurity Bands in d-Doped Quantum WellsQuantum Transport Studies of Atomic Plane (Spike) Doping in InSb and InAsBound Excitons in Quantum WellsExcited Shallow Impurity States in Quantum Well Structures: Correspondences between the Low-Field and High-Field LimitsTime Resolved Far Infra-Red Magnetospectroscopy in GaAs/AlGaAs MQWsPolarized Luminescence Study of Shallow Acceptors in Short-Period SuperlatticesExcited-State Spectroscopy of Shallow Donor Impurities in GaAs/AlGaAs Multi-Quantum WellsTwo-Dimensional D- States in Selectively Doped GaAs-GaAlAs Multi-Quantum WellsInfrared Absorption Coefficient for Shallow Donors in a Quantum WellOptical Absorption Spectra Associated to Shallow Impurities in GaAs-(Ga,Al)As Quantum Well WiresMicroscopic Properties of Hydrogen Passivated Shallow Impurities in SemiconductorsSulfur-Hydrogen Donor Complexes in SiliconPhotothermal Ionization Studies of Effective Mass-Like Hydrogen-Related Donors in SiliconValence Force Models as a Test of Atomic ModelsHydrogen-Impurity Complexes in GaAsAn Investigation of the 78/203 meV Double Acceptor in GaAs Including the Effects of Hydrogen PassivationDiffusion of Deuterium in ZnHgTe and CdHgTe as a Function of CompositionUltra-High Resolution Photoluminescence Studies of Bound Excitons and Multi-Bound Exciton Complexes in SiliconHost-Lattice Isotope Dependence of Acceptor Bound-Exciton Luminescence in DiamondFine Structure of Bound Exciton Luminescence in Uniaxially Stressed Si:BNew Features in the Photoluminescence Spectra of Bound Multiexciton Complexes in Uniaxially Stressed Boron Doped SiliconPhotoluminescence Excitation Spectroscopy of Donors in GeLattice Distortions and Exciton Bound to Nitrogen in GaP-Rich A3B5 AlloysBinding of Excitons around Hg Atoms in ZnxHg1-x Te and CdxHg1-xTe AlloysShallow Acceptor Bound-Excitons in CdTe Epitaxial Layers on (100) GaAsMagneto-Transport in Stressed Si:B in the Localization RegimeAluminum Related Thermally Induced Defects in SiliconShallow Copper-Related Complexes in P-Type SiliconThe Electron Structure and Spectra of Shallow Non-Hydrogenlike Impurities in Semiconductors. II. Acceptors in SiliconInteraction of Phosphorus with Dislocation Cores in SiliconRelaxation of Extrinsic Excitation in Si Doped with III and V Group ImpuritiesIron- and Chromium-Indium Pairs in SiliconAb Initio Calculations on Interstitial O Clusters in SiDiffusion of Groups -IV and -V Impurities in Silicon at High Donor Concentrations: A Comparison between Experimental and Theoretical ResultsEnergy States of Shallow and Deep Impurities and Processes of Optical Transitions, Scattering and Current Carrier Capture in Ge and SiOn the Interplay between Vacancies and Interstitial Clusters in CZ-Grown SiliconThe p3/2' Fano and Piezo-Fano Spectra of Singly Ionised Zinc Impurity in GermaniumSpectroscopy of Transitions to Coulomb-Related Landau States in GermaniumSpectral Dependence of the Shallow Impurity Optical Absorption Cross Section in GermaniumResonance States of a Shallow Acceptor in Degenerate Anisotropic Band SemiconductorBistability of Thermal Donors in Germanium Investigated by Far-IR SpectroscopyShallow Impurity Spectroscopy Using Cyclotron Resonance LasersThe Influence of Metallic Contamination on the Lattice Relaxation of GexSi1-x Epitaxial AlloysImpurity Photoconductivity in GexSi1-x Epitaxial Layers Doped with PhosphorusA FIR Photo-Hall Study of the 1s-2p-1 Shallow Donor Transition in n-GaAsElectronic Structure of Be-Doped GaAsHigh Resolution Magneto-Optical Studies of the Donors in MOCVD InPFar Infrared Magneto-Optical Studies of Free and Bound Carriers in High Purity MBE InAsThe Shallow Doping Properties of Mercury Cadmium Telluride as Grown by Molecular Beam EpitaxyElectron Paramagnetic Resonance of the Shallow Si Donor in Indirect GaAs/AlxGa1-xAs HeterostructuresElectron Beam Doping of Zn into GaAs in an Array of GaAs/Zn/GaAsPressure and Light Induced Metastability Effects near the Magnetic Field Inudced Metal Insulator Transition in n-GaAsCharacterization of Fast Neutron Irradiated GaAs Films by Photoluminescence SpectroscopyThermodynamic Study of Annealing Process of Si-Implanted GaAsTheoretical Description of Donor Bistability in CdF2DX-Like Centres in Semiconductors: Metastability, Bistability and Negative UMagneto-Optical Investigations of DX Centres in AlxGa1-xAsLocalized Electronic States with A1 Symmetry of Substitutional Impurities - are they DX Centres?Photo-Ionization and Metastability of the DX Center in GaAlAs AlloysDX-Centers in Silicon d-Doped GaAs and AlxGa1-xAs?Tunable Apparition of the DX-Linked Level by Photoexcitation in AlGaAs in Magnetic Freezeout Experiments under Hydrostatic PressureShallow States of the DX Centre in AlGaAs: Sn Probed by Admittance Spectroscopy