Sonstiges, Englisch, 1634 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
Sonstiges, Englisch, 1634 Seiten, Format (B × H): 125 mm x 142 mm, Gewicht: 200 g
ISBN: 978-3-03859-775-9
Verlag: Trans Tech Publications
Part 1. 1. Hydrogen in Elemental Hosts. 2. Transition Metal Impurities in Elemental Hosts. 3. Impurities in Elemental Hosts. 4. Irradiation Defects in Elemental Hosts. 5. Oxygen in GaAs, Si and Ge. 6. Theory. Part 2. 7. Hydrogen in Compound Semiconductors. 8. Rare Earth Impurities in Silicon and Compound Semiconductors. 9. Transition Metal Impurities in Compound Semiconductors. 10. Donors in Compound Semiconductors. 11. EL2 And Anti-Site Related Defects. 12. Other Defects in III-V Semiconductors. 13. Growth Defects. Part 3. 14. New Techniques. 15. Defects in SiC and Diamond. 16. Defects in II-VI Semiconductors. 17. Hetero-Epitaxy and Strained Layers. 18. Dislocations. 19. Superlattices. 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures. 21. Processing-Induced Defects. 22. Effects of Defects on Devices.
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Weitere Infos & Material
Microstructure of Hydrogen and Dopants in Hydrogenated Amorphous SiliconElastic Energy Loss due to the Reorientation of H around B in SiliconKinetics of In-H and Cd-H Complexes in SiliconDiffusion and Drift of Hydrogen in Si and GaAsNew Traps for H0 in Boron- and Phosphorus-Doped SiHydrogen-Induced Platelets in Silicon: Separation of Nucleation and GrowthAn Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p+ Layers in Silicon Hydrogen Effusion from Monocrystalline B-Doped SiliconEffect of Multiple Trapping on Hydrogen Diffusion in SiliconLong-Range Correlations and Hydrogen Diffusion in SiliconCharge States of Donor-Hydrogen Pairs in Si: A Fragile BalanceRigid Rotor in a Tetrahedral Field: An Application to (H,Be) and (D,Be) in SiliconElectron Spin Resonance Study on Hydrogen Passivation of Donors in SiliconInteraction of Deuterium with Internal Surfaces in SiliconMeasurements of the Diffusion Coefficient of Hydrogen in Silicon Monitored by Catalyzed Enhanced Oxygen Diffusion JumpsMeasurements Relating to the Solubility of Hydrogen in Silicon at High TemperaturesDonor-Hydrogen Complexes in Silicon Studied by M?ssbauer SpectroscopyDepth Profiles for Hydrogen-Assisted Thermal Donor Formation in SiliconPassivation of Shallow Acceptors in Si and GaAs by Annealing in H2Interstitial H and {H,B}, {H,C}and {H,Si} Pairs in Si and GeSpectroscopy on Transition-Metal Defects in SiliconTransition-Metal Acceptor Pairs in SiliconTheoretical Interpretation of EPR Measurements on the Iron-Shallow Acceptor Pairs in SiliconMagneto-Optical Properties of Fe-Al Pairs in Silicon and the Discovery of a New Trigonal (Fei-Als)0 Pair and Configurations of Iron-Acceptor Pairs in Silicon Related to Stable and Metastable StatesCopper Related Defect Reactions in P-Type SiliconInteraction of a Copper-Induced Defect with Shallow Acceptors and Deep Centers in SiliconOn the Motion of Iron in Silicon at Moderate Temperatures under High Electric FieldsInteraction between Copper and Irradiation-Induced Defects in Crystalline SiliconGettering of Copper and Iron to Extended Surface Defects in SiliconShallow Excited States of the 1014 meV Cu Related Optical Center in SiliconElectronic Nature of Neutral Zinc in Silicon: FTIR-Absorption, Uniaxial Stress MeasurementsDiffusion of Gold in Amorphous SiliconVibronic Interaction of a Gold-Related Center in SiliconThe Gold Center in SiliconElectronic States of Fe4 and Mn4 Clusters in SiliconDiffusivities of 3D Transition-Metal Impurities in SiliconUniaxial Stress Alignment of Pd- and Ni- in SiliconElectrical and Optical Properties of Titanium, Molybdenum and Tungsten Related Defects in SiliconNickel Related Deep Levels in GermaniumMagnetic Resonance from a Metastable Sulfur-Pair-Related Complex Defect in SiliconPiezospectroscopy of Two Beryllium Related Double Acceptors in SiliconOn the Determination of Nitrogen in Czochralski Silicon? NMR of Nonsubstitutional 12B after Implantation into P-Type SiliconDefect Impurity Complex Formation at High Donor Concentration in SiliconElectronic Structure of Isolated Aluminium Point Defects and Defect Pairs in SiliconInteraction and Dynamics of High-Temperature Defects in Carbon-Rich SiliconPhotoluminescence of Edge-Defined Film-FED Growth SiliconEPR Studies of NTD-Produced as Donors in Isotopically Enriched 74Ge Single CrystalsIn Situ HVEM Study of Dopant Dependent Defect Generation in Silicon during 1 MeV Electron IrradiationAtomic Structure of the Interstitial Defects in Electron-Irradiated Si and GeInteractions between Defects during the Annealing of Crystalline SiliconAn Effect of the Beam Current and Energy of Fast Electrons on the Production Rates of A-Centres and Divacancies in n-SiThe Pseudodonor Electronic States of a Metastable Defect in Silicon Studied by Uniaxial Stress SpectroscopyA New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated SiliconConfigurational Metastability of Carbon-Phosphorus Pair Defects in SiliconEPR Study of Multistable Ci-Ps SiliconObservation of a Configurationally Unstable Defect in SiODMR and Electron Spin Echo Studies on the Non-Radiative Triplet State of the (V-O)? Defect in SiliconSpin-Marking Method in Silicon: Interstitial and Pairing DefectsElectrically Active Oxygen in Gallium ArsenideOxygen Related Point Defects in GaAsNew Evidences for the Defect Model of Photoconversion by Oxygen in Semi-Insulating GaAsTheoretical Studies on the Structure for the Core of Oxygen Thermal Donors in SiliconReorientation of Stress Induced Alignment of Thermal Donors in SiliconSilicon Thermal Donors: Photoluminescence and Magnetic Resonance Study of Boron- and Aluminum-Doped SiliconDefect Distribution in Large CZ-Silicon Wafers Investigated by Positron Annihilation SpectroscopyInfrared Absorption by Interstitial Oxygen in Germanium-Doped Silicon CrystalIR Absorption in Monoisotopic GermaniumAb Initio Molecular Dynamics of Semiconductor DefectsImpurity and Defect Induced Metastabilities in Tetrahedral SemiconductorsTheory of Nitrogen and Platelets in DiamondAb Initio Cluster Calculation of Hyperfine Interactions and Total-Energy Surfaces for N in Diamond, Silicon and GermaniumPressure Dependence of Formation and Migration Enthalpies for Atomic Diffusion in Si: Conjugate Gradient Minimization of Total EnergyMany-Electron Effects in the Negative Silicon VacancyDefects and Bandtails in Amorphous SiliconTheory of Second-Order Vibronic Reduction Factors for Deep Level Impurieties in SemiconductorsDonor Bistability Induced by Electron-Phonon CouplingThe Temperature Dependence of Trap Cross SectionsLattice Relaxation Effects on Deep Levels: Molecular Dynamics CalculationsRecombination-Induced Defect Heating and Related PhenomenaElectron-Hole Mechanism of Migration and Defect InteractionDiluted Magnetic Semiconductors with Cr2+ - Unusual p-d InteractionStability of the Positions of an Interstitial Impurity Atom and the Electronic States in SemiconductorsLocal Mode Spectroscopy and Model Study for Assessing the Role of Light Defects in III-V Compound SemiconductorsHydrogen-Dopant Interactions in III-V SemiconductorsInteraction of Hydrogen with Impurities in SemiconductorsCarbon-Hydrogen Interaction in III-V CompoundsQuantum Motion of Muonium in GaAs and CuClAcceptor Passivation in GaP by Positively Charged Hydrogen Manifested by Donor-Acceptor Pair LuminescenceLocal Mode Spectroscopy of OH and NH Complexes in Semi-Insulating Gallium ArsenideEffects of Reverse Bias Annealing and Zero Bias Annealing on Ti/n-GaAs and Au/n-GaAs Schottky Barriers Containing HydrogenStructure and Stability of Cadmium-Defect Complexes in III-V-Compounds Formed after H2-Plasma TreatmentShallow and Deep Radiative Levels of H-Complexes in GaAsDissociation Kinetics of Hydrogen-Neutralized Si Donors and DX Centers in AlGaAsEquilibrium Sites and Relative Stability of Atomic and Molecular Hydrogen in GaAsUnintentional Hydrogenation of III-V Semiconductors during Device ProcessingHydrogen Passivation of Shallow and Deep Centers in GaSbHydrogen in InAs on GaAs Heterostructures: Diffusion Behavior, Electrical and Optical EffectsEffects of Hydrogen in Si-Doped AlAsEnergy Transfer in Rare-Earth-Doped III-V SemiconductorsDopant Enhancement of the 1.54 ?m Emission of Erbium Implanted in SiliconTheory of Substitutional Rare Earth Impurities in SemiconductorsSpectroscopic Investigation of the Er Site in GaAs:ErExcitation Mechanism of the Erbium 4F Emissions in GaAsElectrical Properties of Yb, Er Doped InPOptically Detected Cyclotron Resonance Studies of Erbium and Ytterbium Doped InPPhotoluminescent Properties of Yb Doped InAsP AlloysFTIR High Resolution Optical Study of GaAs:FeInterstitial and Substitutional Mn in GaAs and GaP: Magnetic Resonance StudiesElectronic Structure of Transition-Metal Impurities in GaAs1-xPx AlloysOptical and Spin Dependent Investigations of Mn2+ and V3+ in GaPElectron Paramagnetic Resonance Identification of a Trigonal Fe-S Pair in GaPSemi-Insulating InP:CuReinvestigation of the Optical Properties of the Iron Impurity in GaAs and InPDefect Metastability in III-V CompoundsHigh Pressure Studies of Electronic States with Small Lattice Relaxation of DX-Centres in GaAsVibrational Mode Fourier Transform Spectroscopy with a Diamond Anvil Cell: Modes of the Si DX Center and S Related Centers in GaAsA Photoluminescence Study of the Charge State of a Donor Level in GaAs Induced by Hydrostatic PressureLaplace Transform DLTS Studies of the DX Centers in GaSb and AlGaAsOptically-Detected Magnetic Resonance of Donor States in AlxGa1-xAs (x=0.35) Doped with Group-IV and Group-VI ImpuritiesCoexistence of Deep and Shallow Paramagnetic Excited States of the DX Center in GaAlAsMagnetic Resonance of X-Point Shallow Donors in AlSb:Te Bulk Crystals and AlSb MBE LayersTemperature Dependent Photoconductivity Saturation Proves Negative U of Si-DX Centers in AlGaAsCorrelation Effects due to Ionized Defects in SemiconductorsCapture Kinetics of the Individual DX Center LevelsOn the Kinetics of Photoconductivity in AlxGa1-xAs:SiDX Levels in Si-Doped AlxGa1-xAs Containing BoronCorrelation between the Optically Detected Magnetic Resonance and the Photoconductivity of Photo-Ionized DX Centers in Sn-Doped AlxGa1-xAsParamagnetic Resonance of Sn in AlGaAsLimitations of Ion Channeling for the Study of Bistable DefectsStudies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial StressThe Structure of DX Centers and EL2Theory of the Optical Absorption and of the Magnetic Circular Dichroism of Antisite Related Defects in GaAsPhotoquenching and Photorecovery of the EL2 Defect in n-GaAs under Hydrostatic PressureInteraction of EL2 in Semiinsulating GaAs with above Bandgap LightThe Isolated Arsenic Antisite Defect and EL2 - An ODMR Investigation of Electron Irradiated GalliumarsenideUniaxial Stress and Zeeman Splitting Studies of EL2-Related Photoluminescence in Gallium ArsenideEPR of Anion- and Kation-Antisite-Defects in Plastically Deformed GaAs and GaPGeneration of Anion-Antisite Defects in n-Type, p-Type and Semi-Insulating InP Studied by MCD-ODMR and MCD-ODENDOREnergy Levels Associated with the Metastable State of EL2Re-Examination of the Configuration Coordinate Diagram of EL2Vacancy in the Metastable State of the EL2 Defect in GaAsFirst-Principles Calculations of the Pressure Dependence of EL2 in its Stable StateOpticallly Detected Electron-Nuclear Double Resonance of the Ms=0 State of a PGa-YPSpin-Triplet Center in GaPElectrical Activity and Diffusion of Shallow Acceptors in III-V SemiconductorsPoint Defects and their Reactions in Semiinsulating GaAs after Low Temperature e--IrradiationPhotoluminescence Related to SiGa-SiAs Pairs in GaAsEPR Observation of a Deep Center with A p1 Electron Configuration in GaAsIntrinsic Defects in Electron Irradiated p-Type GaAsHigh Temperature NMR Study of Intrinsic Defects in GaAsPositron Annihilation in Electron Irradiated GaAs: Atomic Structure and Charge State of the DefectsElectrical and Optical Properties of GaAs Doped with LiMetastable States in Semi-Insulating GaAs Revealed by Thermally Stimulated Current SpectroscopyIrradiation-Induced Electronic Levels Removed in the 280K Defect-Annealing Stage of n-GaAsLow Fluence Implantations in GaAs: A Mossbauer Spectroscopy Investigation of Individual and Overlapping Damage CascadesInfluence of Fluorine on Electrical Properties and Complex Formation in GaAsCombined Study of Complex Defects in SemiconductorsDefects in InP Investigated by the Positron Annihilation TechniqueLocalized Vibrational Mode Absorption of Silicon Donors and Beryllium Acceptors in MBE GaAs, InAs and InSbLow Temperature GaAs: Electrical and Optical PropertiesInfluence of Growth Rate and Temperature on the Structure of Low Temperature GaAsElectron Paramagnetic Resonance Studies of Low Temperature Molecular Beam Epitaxial GaAs LayersEffect of Low Temperature Growth on Impurity and Defect Incorporation in AlGaAs Grown by MombeCharacterization of GaAs/AlGaAs Heterostructures Grown by OMVPE Using Trimethylamine Alane as a New Aluminum SourceOxygen Behavior during Silicon Epitaxial Growth: Recent AdvancesDefects in MCZ Silicon with Various Oxygen and Carbon ContentsAtomic Defect Configurations Identified by Nuclear TechniquesCombination of Deep Level Transient Spectroscopy and Transmutation of Radioactive ImpuritiesIdentification of Band Gap States in Silicon by Deep Level Transient Spectroscopy on Radioactive ImpuritiesMicroscopy of Frenkel Pairs in Semiconductors by Nuclear TechniquesModern Muon Spectroscopic Methods in Semiconductor PhysicsMuon Stopping Sites in Semiconductors from Decay-Positron ChannelingPolarized Spectroscopy of Complex Luminescence CentersONP Spectroscopy of Defects in SiliconNuclear Spin Polarization by Optical Pumping of Nitrogen Impurities in SemiconductorsOn the Analysis of Digital DLTS DataA Reevaluation of Electric-Field Enhanced Emission Measurements for Use in Type and Charge State Determination of Point DefectsX-Ray Spectroscopy Following Neutron Irradiation of Semiconductor SiliconSpin Dependent Recombination at Deep Centers in Si - Electrically Detected Magnetic ResonanceExcited Defect Energy States from Temperature Dependent ESRDislocation Associated Defects in Gallium Arsenide by Scanning Tunneling MicroscopyTransition Metals in Silicon Carbide (SiC): Vanadium and TitaniumPhotoluminescence Excitation Spectroscopy of Cubic SiC Grown by Chemical Vapor Deposition on Si SubstratesParamagnetic Defects in SiC Based MaterialsAcceptors in Silicon Carbide: ODMR DataLuminescence and Absorption of Vanadium (V4+): In 6H-Silicon CarbideImpurity-Defect Reactions in Ion-Implanted DiamondNative Defect Compensation in Wide-Band-Gap SemiconductorsODMR Investigations of A - Centres in CdTePicosecond Energy Transfer between Excitons and Defects in II-IV SemiconductorsLuminescence of A 5d-Centre in ZnSInterstitial Defects in II-VI Semiconductors: Role of the Cation d StatesPAC Study of the Acceptor Li in II-VI SemiconductorsGeneration of Metastable Shallow Donors under Cooling in Hexagonal II-VI SemiconductorsStrain Relief in Thin Films: Can we Control it?Composition Modulation Effects on the Generation of Defects in In0.54Ga0.46As Strained LayersElectron-Trapping Defects in MBE-Grown Relaxed n-In0.05Ga0.95As on Gallium ArsenideAtomic Ordering in (110)InGaAs and Its Influence on Electron MobilityDopant Diffusion in Si0.7Ge0.3Characterisation of Dislocations in the Presence of Transition Metal ContaminationCorrelation of the D-Band Photoluminescence with Spatial Properties of Dislocations in SiliconPhotoluminescence and Electronic Structure of Dislocations in Si CrystalsCharacterization of Point Defects in Si Crystals by Highly Spatially Resolved PhotoluminescenceTheoretical Study on the Structure and Properties of Dislocations in SemiconductorsSolid State Processes at the Atomic LevelTheory of Zn-Enhanced Disordering in GaAs/AlAs SuperlatticesSpatial Partition of Photocarriers Trapped at Deep Defects in Multiple Quantum WellsPicosecond Dynamics of Exciton Capture, Emission and Recombination at Shallow Impurities in Center-Doped AlGaAs/GaAs Quantum WellsSpectroscopy of Shallow Donor Impurities in GaAs/GaAlAs Multi-Quantum WellsExcitons Bound at Shallow Impurities in GaAs/AlGaAs Quantum Wells with Varying Doping LevelScanning Tunneling Microscopy Studies of Semiconductor Surface DefectsThe Atomic and Electronic Structure of Ordered Buried B(2x1) Layers in Si(100)Negative U Systems at Semiconductor SurfacesAb Initio Calculations on Effect of Ga-S Bonds on Passivation of GaAs Surface - A Proposal for New Surface TreatmentTwo-Dimensionally Localized Vibrational Mode due to Al Atoms Substituting for Ga One-Monolayer in GaAs0 Surrounding of Pb Defects at the (111)Si/SiO2 Interface17O Hyperfine Study of the Pb CenterDefects Induced by High Electric Field Stress and the Trivalent Silicon Defects at the Si-Si02 InterfaceInterstitial Defect Reactions in Silicon Processed by Reactive Ion EtchingAnomalous Damage Depths in Low-Energy Ion Beam Processed III-V SemiconductorsPhotoluminescence Characterisation of the Silicon Surface Exposed to Plasma TreatmentAn Analysis of Point Defect Fluxes during SiO2 Precipitation in SiliconDeep States Associated with Copper Decorated Oxidation Induced Stacking Faults in SiliconElectrical Properties of Oxidation-Induced Stacking Faults in N-Type SiliconStudy of Internal Oxide Gettering for CZ Silicon: Effects of Oxide Particle Size and Number Density and Assessment of Thermal Stability of Gettering for Copper and NickelMorphology Change of Oxygen Precipitates in Cz-Si Wafers during Two-Step Heat-TreatmentAnnealing of Damage in GaAs and InP after Implantation of Cd and InIon Implantation Induced Sheet Stress due to Defects in Thin (100) Silicon FilmsObservation of a Trivalent Ge Defect in Oxygen Implanted SiGe AlloysComparison between Defects Introduced during Electron Beam Evaporation of Pt and Ti on n-GaAsEnhanced-Diffusion in Electron-Beam Doping of SemiconductorsHigh Temperature Defect-Free Rapid Thermal Annealing of III-V Substrates in Metallorganic Controlled AmbientThe Properties of Individual Si/SiO2 Defects and Their Link to 1/F NoiseHydrogen Induced Defects and Defect Passivation in Silicon Solar CellsA Study of Radiation Induced Defects in Silicon Solar Cells Showing Solar Cells Showing Improved Radiation ResistanceDefects and Schottky Barrier Formation: A Positive Proof for Epitaxial Al on AlGaAs Schottky DiodesRecombination-Enhanced Diffusion of Be in GaAsRole of the Diffusivity of Be and C in the Performance of GaAs/AlGaAs Heterojunction Bipolar TransistorsEffects of the Substrate-Epitaxial Layer Interface on the DLTS Spectra in MESFET and HFET DevicesThe Study of Interfacial Traps of InP Metal-Insulator-Semiconductor Stuctures
