Buch, Englisch, Band 59, 208 Seiten, Format (B × H): 148 mm x 210 mm
Reihe: Science for Systems
Buch, Englisch, Band 59, 208 Seiten, Format (B × H): 148 mm x 210 mm
Reihe: Science for Systems
ISBN: 978-3-8396-1867-7
Verlag: Fraunhofer Verlag
Gallium nitride (GaN) high-electron-mobility transistor (HEMT) technology appears as an appealing candidate for supporting a variety of millimeter-wave (mm-wave) applications with its unique combination of simultaneous high-voltage and high-frequency operation. However, despite the rapid advance in GaN HEMT technology, the reported available gain of the devices is still limited at higher mm-wave frequencies in comparison to the competing high-speed semiconductor processes.
This work investigates several approaches to enhance the performance of GaN-based circuits operating within the mm-wave spectrum. The main aim is to provide a set of design approaches and techniques to enable broadband operation of mm-wave GaN power amplifier monolithic microwave integrated circuits (MMICs), with a particular focus on frequencies close to and beyond the 100-GHz mark. In order to fulfill this goal, these approaches need to simultaneously target distinct design levels. Furthermore, implementing the concepts investigated in this work on circuit-level result in several MMICs providing state-of-the-art performance among GaN-based power amplifiers.
Cwiklinski / Fraunhofer IAF, Freiburg / Cwiklinski
Design of Millimeter-Wave Power Amplifiers in Gallium Nitride High-Electron-Mobility Transistor Technology. jetzt bestellen!
This work investigates several approaches to enhance the performance of GaN-based circuits operating within the mm-wave spectrum. The main aim is to provide a set of design approaches and techniques to enable broadband operation of mm-wave GaN power amplifier monolithic microwave integrated circuits (MMICs), with a particular focus on frequencies close to and beyond the 100-GHz mark. In order to fulfill this goal, these approaches need to simultaneously target distinct design levels. Furthermore, implementing the concepts investigated in this work on circuit-level result in several MMICs providing state-of-the-art performance among GaN-based power amplifiers.
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikrowellentechnik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Nachrichten- und Kommunikationstechnik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Elektronische Baugruppen, Elektronische Materialien
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
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