Cressler SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

Erscheinungsjahr 2010
ISBN: 978-1-4200-6686-9
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 264 Seiten

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Zielgruppe

Electrical engineers and materials scientists.

Autoren/Hrsg.

Cressler, John D.

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Energietechnik | Elektrotechnik Energietechnik & Elektrotechnik

Inhaltsverzeichnis

Contents
Introduction
The Big Picture; J.D. Cressler
A Brief History of the Field; J.D. Cressler
SiGe and Si Strained-Layer Epitaxy
Overview: SiGe and Si Strained-Layer Epitaxy; J.D. Cressler
Strained SiGe and Si Epitaxy; B. Tillack and P. Zaumseil
Si/SiGe(C) Eptiaxy by RTCVD; D. Dutartre, F. Deléglise, C. Fellous, L. Rubaldo, and A. Talbot
MBE Growth Techniques; M. Oehme and E. Kasper
UHV/CVD Growth Techniques; T.N. Adam
Defects and Diffusion in SiGe and Strained Si; A.R. Peaker and V. Markevich
Stability Constraints in SiGe Epitaxy; A. Fischer
Electronic Properties of Strained Si/SiGe and Si1–yCy Alloys; J.L. Hoyt
Carbon Doping of SiGe; H.J. Osten
Contact Metallization on Silicon–Germanium; C.K. Maiti
Selective Etching Techniques for SiGe/Si; S. Monfray, S. Borel, and T. Skotnicki
Appendices
Properties of Silicon and Germanium; J.D. Cressler
The Generalized Moll-Ross Relations; J.D. Cressler
Integral Charge-Control Relations; M. Schröter
Sample SiGe HBT Compact Model Parameters; R.M. Malladi
Index