SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

1. Auflage 2007
ISBN: 978-1-4200-6685-2
Verlag: Taylor & Francis Inc

Buch, Englisch, 262 Seiten, Format (B × H): 178 mm x 254 mm, Gewicht: 612 g

What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications.
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Zielgruppe

Professional

Autoren/Hrsg.

Cressler, John D.

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
• Technische Wissenschaften Energietechnik | Elektrotechnik Energietechnik & Elektrotechnik

Inhaltsverzeichnis

The Big Picture. A Brief History of the Field. Overview: SiGe and Si Strained-Layer Epitaxy. Strained SiGe and Si Epitaxy. Si/SiGe(C) Epitaxy by RTCVD. MBE Growth Techniques. UHV/CVD Growth Techniques. Defects and Diffusion in SiGe and Strained Si. Stability Constraints in SiGe Epitaxy. Electronic Properties of Strained Si/SiGe and Si1-y Cy Alloys. Carbon Doping of SiGe. Contact Metallization on Silicon–Germanium. Selective Etching Techniques for SiGe/Si. Appendices.

Über Autor(innen)

John D. Cressler