Measurement and Modeling of Silicon Heterostructure Devices

1. Auflage 2007
ISBN: 978-1-4200-6692-0
Verlag: Taylor & Francis Inc

Buch, Englisch, 198 Seiten, Format (B × H): 264 mm x 189 mm, Gewicht: 522 g

When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data.
Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Zielgruppe

Professional

Autoren/Hrsg.

Cressler, John D.

Fachgebiete

• Technische Wissenschaften Energietechnik | Elektrotechnik Energietechnik & Elektrotechnik
• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie

Inhaltsverzeichnis

Overview: Measurement and Modeling. Best-Practice AC Measurement Techniques. Industrial Application of TCAD for SiGe Development. Compact Modeling of SiGe HBTs: HICUM.  Compact Modeling of SiGe HBTs: Mextram. CAD Tools and Design Kits. Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs. Transmission Lines on Si. Improved De-Embedding Techniques.

Über Autor(innen)

John D. Cressler