Silicon-on-Insulator Technology: Materials to VLSI

Materials to VLSI
3rd Auflage 2004. Softcover Nachdruck of the original 3rd Auflage 2004
ISBN: 978-1-4613-4795-8
Verlag: Springer US

Buch, Englisch, 366 Seiten, Paperback, Format (B × H): 155 mm x 235 mm, Gewicht: 581 g

Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors.
This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis.

Zielgruppe

Research

Autoren/Hrsg.

Colinge, J. -P.

Fachgebiete

• Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Bauelemente, Schaltkreise
• Naturwissenschaften Chemie Physikalische Chemie Elektrochemie, Magnetochemie
• Technische Wissenschaften Energietechnik | Elektrotechnik Elektrotechnik
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik

Inhaltsverzeichnis

1 Introduction.- 2 SOI Materials.- 2.1 Introduction.- 2.2 Heteroepitaxial techniques.- 2.3 Dielectric Isolation (DI).- 2.4 Polysilicon melting and recrystallization.- 2.5 Homoepitaxial techniques.- 2.6 FIPOS.- 2.7 Ion beam synthesis of a buried insulator.- 2.8 Wafer Bonding and Etch Back (BESOI).- 2.9 Layer transfer techniques.- 2.10 Strained silicon on insulator (SSOI).- 2.11 Silicon on diamond.- 2.12 Silicon-on-nothing (SON).- 3 SOI Materials Characterization.- 3.1 Introduction.- 3.2 Film thickness measurement.- 3.3 Crystal quality.- 3.4 Carrier lifetime.- 3.5 Silicon/Insulator interfaces.- 4 SOI CMOS Technology.- 4.1 SOI CMOS processing.- 4.2 Field isolation.- 4.3 Channel doping profile.- 4.4 Source and drain engineering.- 4.5 Gate stack.- 4.6 SOI MOSFET layout.- 4.7 SOI-bulk CMOS design comparison.- 4.8 ESD protection.- 5 The SOI MOSFET.- 5.1 Capacitances.- 5.2 Fully and partially depleted devices.- 5.3 Threshold voltage.- 5.4 Current-voltage characteristics.- 5.5 Transconductance.- 5.6 Basic parameter extraction.- 5.7 Subthreshold slope.- 5.8 Ultra-thin SOI MOSFETs.- 5.9 Impact ionization and high-field effects.- 5.10 Floating-body and parasitic BJT effects.- 5.11 Self heating.- 5.12 Accumulation-mode MOSFET.- 5.13 Unified body-effect representation.- 5.14 RF MOSFETs.- 5.15 CAD models for SOI MOSFETs.- 6 Other SOI Devices.- 6.1 Multiple-gate SOI MOSFETs.- 6.2 MTCMOS/DTMOS.- 6.3 High-voltage devices.- 6.4 Junction Field-Effect Transistor.- 6.5 Lubistor.- 6.6 Bipolar junction transistors.- 6.7 Photodiodes.- 6.8 G4 FET.- 6.9 Quantum-effect devices.- 7 The SOI MOSFET in a Harsh Environment.- 7.1 Ionizing radiations.- 7.2 High-temperature operation.- 8 SOI Circuits.- 8.1 Introduction.- 8.2 Mainstream CMOS applications.- 8.3 Niche applications.- 8.4 Three-dimensional integration.